摘要：
Photodetectors are light responsive devices that convert optical signals into electric signals. Photodetectors have wide applications in image sensing, environmental monitoring, day- and night-surveillance, chemical and biological detection, industrial process control, communication, planetary probing and so on. Currently, photodetectors based on GaN, ZnO, Si, InGaAs and bulk PbS cover different sub-bands from UV to infrared region. These photodetectors are expensive and some of them require to be operated at low temperature, which certainly limits their applications. Polymer photodetectors made with conjugated polymers possess the unique features, including room-temperature operation, high sensitivity, low working voltage, low cost, thin profile, large area and flexibility. Ultrasensitive polymer photodetectors with high response speed and spectral response ranging from UV to near infrared have been demonstrated. However, new device structure, high responsivity and stable polymer photodetectors needs to be developed. In my dissertation, we reported various methods to enhance the performance of polymer photodetectors. By solvent annealing and post-production thermal annealing, we were able to demonstrate that polymer photodetectors possess comparable responsivity to inorganic counterparts. We have, for the first time, developed the inverted device structure for polymer photodetectors. By utilizing inorganic nanowires and quantum dots as either cathode or anode buffer layer, we were able to demonstrate robust polymer photodetectors. We also investigate the device performance versus energy offset between the workfunction of anode electrode and the valance band of conjugated polymers, band offset at the heterojunction and purity of conjugated polymers.
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