关键词:
extreme-ultraviolet photoresist
Sn-oxygen clusters
free radical
alkyl ligand
摘要:
Notably,the cleavage of Sn–C bonds in extreme-ultraviolet photoresists containing Sn-oxygen(oxo)clusters and the generation of free radicals upon exposure lead to the chemical linking of Sn-oxo cores and subsequent solubility *** reactivities and migration patterns of the generated radicals substantially influence patterning outcomes,including sensitivity and ***,two Snoxo clusters,Sn_(4)-Me-C_(10)(with Sn–methyl)and Sn_(4)-Bu-C_(10)(with Sn–butyl),were combined to balance the sensitivity and resolution of photoresists,leveraging the feedback regulation between methyl and butyl free radicals generated from Sn–C bond *** electron beam lithography exposure,sensitive butyl radicals produced by Sn_(4)-Bu-C_(10)initiated reactions within Sn_(4)-Me-C_(10),improving ***,the unstable methyl and bulky adamantyl radicals generated by Sn_(4)-Me-C_(10)quenched the excess butyl radicals,thus improving the resolution and exposure ***,this method leveraging the feedback regulation of free radicals offers new insights into the design of sensitive metal oxide resists with enhanced resolution.