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关键词： Insulated gate bipolar transistors   Thermal management   Junctions   Regulation   Reliability   Investment   Estimation   Insulated gate bipolar transistor (IGBT) module   return on investment (ROI)   thermal management   wind power converter (WPC)  

摘要： Insulated gate bipolar transistor (IGBT) module is one of the most prone-to-fail components in the wind power converter (WPC). The reduction of the junction temperature swing by thermal management can improve the reliability of a WPC. Due to the lack of an applicable selection criterion, not many studies on the control target of junction temperature swing were reported. This article proposes a thermal management strategy to find the control target of junction temperature swing. The proposed strategy considers the return on investment (ROI) of thermal management as a quantitative indicator to guide the control target selection. The selected control target enables optimal benefit of the thermal management. Results show that a 1% increase in the total harmonic distortion would extend the lifetime of IGBT module by 0.144 years. Success of the proposed scheme lies in the efficient regulation of the junction temperature swing. Case studies with different mission profiles and experimental tests on a three-phase two-level inverter are presented to validate the proposed method.

关键词： Electrothermal model   failure modes decoupling   insulated gate bipolar transistor (IGBT)   solder degradation  

摘要： Solder degradation is one of the main packaging failure modes in insulated gate bipolar transistor (IGBT) modules, which is usually evaluated through the change of thermal resistance. However, due to the strong electrothermal coupling in the IGBT module, solder degradation also affects electrical characteristics, such as ON-state voltage VCE. The impact mechanism of solder degradation on VCE is analyzed in this paper first. For the study of the solder degradation independently, a press-packing setup is designed for the accelerated aging test, which can remove the influence of bond wires degradation and significantly improve the experimental efficiency. Then, the IGBT equivalent resistance is defined, which conforms to Ohm's law in the calculation and can respond to the real-time dynamic current. So, it could be conveniently used in the finite element method (FEM)-based simulation. Meanwhile, a realistic 3-D degradation model of the solder layer is constructed by an image processing method. Furthermore, an electrothermal coupling model based on the finite element is constructed to study the impact of solder degradation on the electrical and thermal characteristics of IGBT. Finally, the proposed degradation mechanism is verified by simulation and experimental results.

关键词： Binary alloys  

摘要： The IMC (interfacial intermetallic compound) produced by the metallurgical reaction between the solder and the Cu plate enables the packaging of IGBT (insulated gate bipolar transistor) modules. In this paper, the growth behavior of IMCs of Sn58Bi/Cu and Sn58Bi-0.05AlN/Cu at different times (10, 30 and 60 min) and temperatures (200, 250 and 300 °C) was investigated, which can provide a reference for the connection of IGBT. It was shown that the interfacial IMC thickness of both solders increased with time and temperature, but the growth of interfacial IMC was suppressed for Sn58Bi solder containing 0.05 wt.% AlN. Because of the adsorption effect of AlN nanoparticles, they can adhere to the surface of IMC layer and decrease the effective the diffusion path of unreacted Cu atoms, thereby inhibiting the growth of interfacial IMC. And the effect of AlN particles on interfacial IMC was analyzed via phase field simulation. In addition, under the heating conditions with high temperature and long time, there were fewer cracks in the solder joints containing AlN particles, compared to the Sn58Bi solder. Therefore, AlN nanoparticles can enhance the reliability of Sn58Bi/Cu solder joints. © 2022, The Authors. All rights reserved.

关键词： Submarines  

摘要： The main reason for lead-acid batteries failure is sulfation, namely, deposition of lead sulfate on the electrodes during repeated charging cyclesThe charge is partially consumed for electrolyzing water and the evolution of hydrogen and *** order to increase the life cycle of the lead-acid battery by preventing sulphation,it is necessary to activate the appropriate charge and discharge *** of the many methods reviewed is IGBTtechnology. In this study, the design and production process of a submarine battery charger-discharger with a sensitivity of seven per thousand, which was developed by using IGBT technology to prevent sulfation in submarine batteries, is discussed. © 2022, The Authors. All rights reserved.

关键词： Insulated gate bipolar transistors (IGBT)  

摘要： The insulated gate bipolar transistor (IGBT) is widely utilized in the transportation, power, and energy domains because of its high input impedance and minimal on-voltage drop. IGBTs are frequently used in industrial applications for lengthy periods of time, collecting fatigue damage and eventually aging and failing, which can result in system shutdown and financial losses in severe circumstances. As a result, a study into the IGBT's reliability is extremely important. Fault prediction technology, which is an important aspect of reliability research, may analyze device state through changes in terminal parameters, anticipate aging trends, and issue early warnings at thresholds to avoid significant safety issues caused by IGBT aging failures. Therefore, the appropriate end parameters are selected as aging characteristic parameters, and fault prediction is performed. Therefore, this paper has carried out research on the IGBT fault prediction technology that integrates the terminal characteristics and artificial intelligence neural network. The main research contents include the following: (1) this paper starts from the basic principle of IGBT and the structure of its device and analyzes its failure mode on the failure of IGBT. The characteristic parameter of collector-emitter turn-off peak voltage value is selected for IGBT fault prediction, and the aging data of NASA PCoE Research Center is used to verify that the characteristic parameter can be used for fault prediction. (2) In view of the shortcomings of traditional fault forecasting methods, this paper proposes to use deep learning time series forecasting methods for fault forecasting. The LSTM is theoretically analyzed, and the prediction network is built. The experimental results show that the LSTM network model can improve the accuracy of IGBT fault prediction, with fewer parameters and higher prediction efficiency.

关键词： 三相异步电机   高压变频器   结构设计   矢量控制  

摘要： 高压变频技术可实现电气软启动,具有启动电流小、节能效果优、设备使用寿命长等优点。以现有的带式输送机驱动电机高压变频器为研究对象,介绍了三相异步电机驱动的数学模型、矢量控制技术以及变频器的结构设计,设计并搭建高压变频器,并经后期的仿真分析与实验测试发现,新的高压变频器达到设计要求,对提高保障设备的使用寿命具有重要意义。

关键词： 电力技术   电力节能技术   节能型配电系统   变频器  

摘要： 随着现代社会的繁荣发展,国家对能源和环保领域的发展更加重视,制定并出台了一系列政策,电力节能技术的应用成为一项焦点问题。对此,文章首先阐述了电力节能技术的应用意义,简要介绍了常见的电力节能技术设备,然后分析了电力节能技术的具体应用,以期为该领域提供一定参考。

关键词： 交直流混合微电网   模糊下垂控制   同步信号   全局协调控制  

摘要： 针对交直流混合微电网,提出了一种基于本地自适应调节的微电网全局协调控制策略。对直流子微网内的分布式电源(DG)设计模糊自适应下垂控制,通过自动调节下垂系数消除线路阻抗的影响,实现直流子微电网内部有功功率的精确分配。对交流子微电网内的分布式电源,设计基于同步补偿的改进下垂控制,从而消除线路阻抗的影响,保证有功功率均分的同时实现无功功率均分。在本地调节的基础上,设计计及储能参与的混合微电网全局协调控制策略,消除频率/电压偏差并恢复至额定值,实现交直流子微网间、子微网与储能系统间功率的合理流动和自主分配。与此同时制定功率交换控制规则,以避免不必要的功率交换,降低了功率损耗并延长了储能寿命。运用MATLAB/SimuLink仿真平台,对所设计控制策略的有效性进行验证。

关键词： 最优控制策略   逆变器   散热结构   太阳能  

摘要： 在全球能源紧缺、环境污染日益严重的今天,太阳能等新能源日益受到重视。新能源的发展成为人们的全新选择,不仅可以有效减少能源资源的消耗,还能提高人们的生活品质、减少环境污染。文章分析了逆变器的工作原理与散热需求,提出了光伏逆变器散热结构与性能的最优化控制策略,以期提高光伏逆变器的整体运行质量。

关键词： 车用IGBT模块   失效机理   状态监测   故障诊断   寿命预测  

摘要： 面向车用IGBT模块健康管理技术,分别从失效机理、状态监测、故障诊断、寿命预测四个方面综述国内外的研究进展,提出当前研究中存在的关键问题和技术优缺点,在此基础上,对车用IGBT模块健康管理技术今后的发展趋势做出展望。