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关键词： 变频技术   变频器   系统复杂性   电气化   丹佛斯   能效   产品家族   紧凑型  

摘要： 2022年8月8日,上海-全球变频技术和电气化解决方案领导者丹佛斯传动宣布,推出面向未来的新一代紧凑型变频器产品iC2-Micro。该产品不仅延续了丹佛斯传动紧凑型变频器产品家族高品质、高可靠性的优势,而且性能更强大,能效更高;在帮助客户降低系统复杂性的同时,节约综合使用成本,为客户创造更多长期价值。早在2007年,作为全球变频技术的领导者。

关键词： FPGA   永磁同步电机   HLS   矢量控制  

摘要： 永磁同步电机(PMSM)具有调速性能好、功率密度高以及结构简单等优点,广泛应用于工业领域和消费领域。在分析PMSM数学模型的基础上,根据矢量控制理论采用模块化设计思想和现代EDA工具在单颗FPGA芯片实现了PMSM矢量控制系统。在Vivado软件中采用高层次综合(HLS)实现park变换、clark变换等核心算法,提高了FPGA的开发效率。测试验证了控制系统的可行性,电流环调整频率达20 kHz,速度环调整频率达10 kHz。

关键词： 高压变频器   日常维护   常见故障   处理  

摘要： 高压变频器在高压交流电动机变频调速中被广泛应用,能够有效减少设备能源消耗,全面提高设备调速的安全稳定性。因此,相关人员要合理应用高压变频器,同时做好定期操作维护工作,明确设备应用过程中常见故障,结合故障问题的实际情况和发生原因,选择相适应的处理方法,保证工作开展开展迅速性和实效性,为高压变频器安全可靠运行提供支持和保障。

关键词： 高压变频器   风洞   能耗制动  

摘要： 随着空气动力学研究的深入,风洞作为空中或者地面交通器的重要实验装备,在以交通器噪声指标为代表的科学研究和工程设计中发挥越来越重要的作用。高压变频器作为空气动力地面实验台主机的驱动设备,性能要求较高,主要体现在转速准确度、转矩响应和制动能力等方面。以风洞主机高压变频驱动装置研究为例,建立了风洞主机工况模型,通过升降速和惰转时间研究,提出了变频器单元能耗制动方案。基于以上工作的模拟实验验证了风洞主机变频器的技术可靠性,可作为相关产品制动系统方案设计的参考。

关键词： 永磁直线同步电机   滑模控制器   模型自适应观测器  

摘要： 针对永磁直线同步电机(Permanent Magnet Linear Synchronous Motor,PMLSM)通常对扰动以及负载阻力相对敏感、同时传感器容易受到外界环境影响导致测量不精确等问题,为了摆脱位置传感器对电机伺服系统的影响,本文构建了以改进型趋近律滑模控制器为核心,以模型参考自适应算法为观测器的PMLSM无传感器矢量控制系统。首先对传统PI控制器的不足进行了分析,设计了一种改进的滑模速度控制器,提出了模型参考自适应的观测方式,并搭建了永磁直线电机控制系统仿真模型。通过仿真对控制系统进行了验证,结果表明该方法控制下的追踪信号误差能控制在0.2mm内,系统运行平稳,具有较好的实用性。

关键词： 改进滑模观测器   滑模速度控制器   双曲正切函数  

摘要： 针对传统永磁同步电机(PMSM)无速度传感器控制系统存在高频抖动、低速失效、转速和转子位置估计差等问题,提出一种基于永磁同步电机的双滑模控制方法.首先,基于永磁同步电机数学模型构建闭环控制系统,引入含有边界层的双曲正切函数替代传统滑模控制器的开关函数,减少系统的高频抖动;其次,采用锁相环(PLL)提取转子位置和转速信息,提高检测精度;最后,设计一种滑模控制器来替代PI速度外环,增强系统的鲁棒性,减少外界干扰.Simulink仿真结果表明,采用滑模控制的速度外环相较于PI控制具有更好的动态性能,改进后的系统有效提升了系统跟踪精度,使电机在全速段可以保持良好的估算性能.

关键词： Circuit faults   Insulated gate bipolar transistors   Multichip modules   Automatic voltage control   Power system stability   Reactive power   Rails   Cascaded H-bridge converter   fault ride-through   power quality  

摘要： To address the most commonly seen single insulated gate bipolar transistor (IGBT) open-circuit fault problems in cascaded H-bridge (CHB) converter based static synchronous compensator, a simple online fault diagnosis method and the corresponding ride-through operation approach are proposed. The method can quickly determine the exact location of the open-circuit IGBT through three steps, via analyzing the relationships between the dc bias in the three-phase output current of CHB converter, the transient dc rail voltage variations with respect to the averaged dc rail voltage, and the response of dc rail voltage and output current when the modulation approach of the faulty power module is adjusted. Afterwards, a fault ride-through approach is adopted to seamlessly transfer the modulation approach of faulty H-bridge module and it behaves as a half-bridge to provide a half of the rated output ac voltage. Meanwhile, the corresponding dc offset voltage from this faulty module is compensated by producing the same dc voltage in the healthy phase legs to avoid the dc bias in the three-phase output current. It has been demonstrated that the proposed fault diagnosis approach and the fault ride-through approach are effective in various adverse situations including grid voltage sudden disturbances and the load power sudden changes. Comprehensive simulated and experimental results have been provided to validate the effectiveness of the proposed approach.

关键词： Hybrid-channel injection enhancement   insulated-gate bipolar transistors (IGBTs)   ON-state voltage drop   silicon carbide (SiC)   turn-OFF loss  

摘要： Conventional planar- and trench-gate silicon carbide insulated-gate bipolar transistors (SiC C-IGBT and T-IGBT) suffer from higher turn-OFF loss (E-off) and ON-state voltagedrop [V-ce(sat)]. Animprovedhybrid-channelinjection enhanced modulation 4H-SiC IGBT (HC-IGBT) is proposed and investigated to overcome these shortcomings in this article. The proposed IGBT structure is considered 3-D because the gate wraps around a raised emitter-to-collector channel, instead of residing on top of the channel in the conventional 2-D planar-gate structure. Therefore, multiple gates are ganged together through the same gate electrode to enable more electrons in the "ON" state and provide more path to remove extra holes in the "OFF" state. Comparing with C-IGBT and T-IGBT structure, HC-IGBT gains an improvement of 108% and 21% in a differential specific ON-resistance as well as a turn-OFF loss reduction of 11% and 16%. The industrial figure of merit (IFOM = V-ce(sat) x E-off) of HC-IGBT is reduced by 21% and 22% comparedwith C-IGBT and T-IGBT, respectively. Meanwhile, the Baliga's figure of merit (BFOM = V-BR(2)/R-on,R- sp) shows about 63% and 15% larger than that of C-IGBT and T-IGBT. These results show that HC-IGBT structure has much superior tradeoff between the ON-state voltage drop and turnOFF loss, indicating the potential for ultrahigh-voltagepower electronic of the future.

关键词： 能源管理   互联连续系统   研究  

ISBN: (纸本)9787030727053

摘要： 本书是作者及其研究团队多年来在能源互联系统研究领域理论成果及工程经验的集成。本书试图在总结能源互联系统研究工作的基础上，借助自适应动态规划方法，对能源互联系统的最优控制与安全运行问题加以深入研究，建立起适用于实际复杂控制场景的自学习最优协同控制基础理论和综合检测方法。本书对综合能源系统领域的调压调频、优化调度、故障检测、运行状态实时监测等问题具有指导、借鉴作用。本书内容全面、实用性强，既可作为大专院校电气工程类、控制工程类、能源动力类专业的研究生教材，也可作为能源互联系统运行调控专业技术人员的参考用书。

关键词： Fast recovery diode   high voltage   IGBT   safe operation area   silicon   TCAD  

摘要： Silicon Fast Recovery Diodes of 4.5 kV class were produced with diameter of active area between 100 and 150 mm. Wide Safe Operation Area is experimentally demonstrated with IGBT operated at di/dt above 4 kA/mu s for which diode recovery losses and peak power show decreasing trend above the diode average rating current of 5 kA, which is half of Insulated Gate Bipolar Transistor (IGBT) short circuit current. The role of IGBT switch and diode design on the robustness enhanced by increased diode area, is explained. The experimental results are confirmed by device simulation (TCAD).