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关键词： Insulated gate bipolar transistors   Capacitance   Germanium   Switches   Inverters   Capacitors   Temperature   IGBT   power loss   DC link capacitance   swing bus operation  

摘要： The power density and reliability of the inverter can be improved with reduced DC-link capacitance by swing bus operation, etc. With insufficient DC-link capacitance, a double line frequency voltage ripple will be superimposed on the DC link, but how this voltage ripple affects the power loss of the IGBT in the inverter system has been seldom discussed. This paper analyzes the influence of voltage fluctuations on the power loss of IGBT and establishes the characteristic database of IGBTs under different operating voltages and currents using a dynamic test chamber. A switching profile-based power loss model has been proposed to evaluate the power loss of IGBT in the single-phase inverter under different DC link voltage ripples. All the theoretical analysis has been verified by a 6-kW inverter platform under swing bus operation (SBO).

关键词： Inverters   Silicon carbide   Topology   Switches   Power harmonic filters   Harmonic analysis   Hybrid power systems   Hybrid silicon carbide (SiC)-silicon (Si) dc-ac converter   multi-quasi-proportional-resonance (QPR) control   partial power conversion   selective harmonic elimination pulsewidth modulation (SHEPWM)   Si-IGBT master unit (MU)   SiC-MOSFET slave unit (SU)  

摘要： Based on partial power conversion concept, this article proposes a hybrid silicon carbide (SiC)-silicon (Si) dc-ac topology to improve performance in high power application. First, master unit (MU) uses Si-IGBT working in low frequency to handle main high power because of its high rated current capacity and high switching loss, whereas the low power quality of MU is induced by the low switching frequency. And SiC-MOSFET suffers from high cost and high conduction loss at high power level. To solve these problems, the partial-power slave unit (SU) based on SiC-MOSFET is connected with MU in series through line-frequency transformer, whereas SU works in high frequency to compensate the harmonic of MU and adjusts the total output voltage. In this new topology, the corresponding hybrid modulation strategy and multiple quasi-proportional-resonance control for single-phase system are introduced in detail to ensure the reliable operation. In the end, a 4.5-kW converter prototype was implemented and tested. Simulation and experiment results are given to verify the performance of the proposed hybrid dc-ac topology.

关键词： Smart cities   Efficiency   PV Based inverter   Power semiconductor switches   IGBT and MOSFET  

摘要： In this modern world, the need of renewable energy power generation has grown lot, due to the huge increase in power demand as well depletion of fossil fuels. In smart cities, solar applications such as solar power generation in the city and offsite, solar water heaters for hot water, solar PV rooftop systems for electricity, solar street lightings, solar pumps for water lifting, solar concentrators for steam based cooking, solar traffic signals, and solar road studs/blinkers are widely used. Buildings consume around 40% of the energy used in a city. Energy efficient green buildings that are linked with renewable energy and energy conservation technologies can save 30-40% of the conventional energy used in buildings. solar photovoltaic (PV) with voltage source inverters are being widely used these days in the power *** inverters have power losses which occur mainly in semi-conductor elements. This paper portrays a study on losses in these inverters. It also aims at increasing the efficiency of the inverter by reducing switching losses. Semi-conductor switching element's power losses vary with switches. Here we are comparing the most widely used semiconductor switches like Insulated Gate Bipolar Transistor (IGBT) and Metal Oxide Semiconductor Field Effect Transistor (MOSFET). A single-phase inverter based on IGBT and MOSFET is designed and simulated in a MATLAB-Simulink environment. The voltage drop and thereby the power loss across the switches are compared by simulation. The inverter switching is carried out by Pulse Width Modulation(PWM) technique, which many advantages than other techniques. The proposed technique shows that the inverter with IGBT has low power loss than the inverter with MOSFET.

关键词： Wires   Insulated gate bipolar transistors   Copper   Resistance   Junctions   Silicon   Equivalent circuits   Bond wire   finite-element simulation   insulated gate bipolar transistor (IGBT)   position   power loss model  

摘要： Based on the actual packaging structure of insulated gate bipolar transistor (IGBT) module, this article establishes the power loss model, and analyzes the influence of the position of the lift-off bond wire on the module. Through the theoretical analysis, it is found that the position of the lift-off bond wire is an important factor affecting the aging of the modules. And then the electrothermal coupling model of IGBT is established for simulation, and an experimental platform is built for verification. The results show that the distribution of bond wire lift-off position is one of the characteristics of bond wire failure. When the bond wire lift-off failure is concentrated on a single IGBT chip, it will accelerate the aging process of the modules. Therefore, this article considers that the position of the lift-off bond wire is a significant factor in the aging process of the modules, which should be fully considered in the bond wire state evaluation. In addition, the research results of this article can also provide theoretical reference for the optimization of IGBT module packaging structure.

关键词： Single-event burnout   SOI-LIGBT   Hardening   Analytical model  

摘要： In this paper, we study the single-event burnout (SEB) tolerance of the 550 V SOI Lateral-IGBT (SOI-LIGBT). The TCAD simulations are performed to inspect the SEB triggering criteria. The SEB of SOI-LIBGT is caused by the ionized carriers induced latch-up of the inherent parasitic thyristor. The peak value of base-emitter voltage (V-be) in the parasitic NPN transistor is used as the critical parameter to inspect whether the SEB occurs. An analytical model is brought up to reveal the failure procedure during SEB and the hardening strategy. The hardening SOI-LIGBT with the shallow p + layer (SPL-LIGBT) is proposed to improve the SEB immunity by reducing peak V-be. It is verified by both analytical model and TCAD simulations that the SEB threshold voltage (VSEB) can be enhanced to 250 V at the linear energy transfer (LET) of 37 ***(2)/g in the blocking state.

关键词： 移相控制   三电平双有源全桥   软开关  

摘要： 变压器原副边桥臂电压不匹配时,移相控制三电平双有源全桥直流变换器(3L-DAB)的开关管可能会工作在硬开关模式,导致系统损耗增加、效率降低。针对这个问题,该研究对3L-DAB变换器的软开关工作范围展开详细的分析。首先,描述了移相控制下3L-DAB变换器的功率传输特性;在此基础上,基于稳态时域模型,推导了随着移相角和变压比的变化,变压器原副边所有开关器件的软开关工作范围。然后,对比分析了考虑开关管结电容前后变换器的软开关工作范围变化。最后,通过仿真和搭建的实验平台验证了理论分析的正确性。

关键词： 西门子变频器   PLC控制   程序设置  

摘要： 随着我国当前自动化技术和网络通信技术的不断发展,在进行生产时转变了以往的控制方式,由单台电机控制转变为多种方式的控制模式。在当前时代下,西门子变频器PLC控制技术得到了广泛性的利用,不仅可以构成一体化的电机控制系统,还有助于提升实际工作效果和工作质量。因此实际工作中需要加强对西门子变频器PLC控制的了解以及认识,从不同的角度中优化控制系统以及设计模式,从而彰显现代化的工作效果。

关键词： 双三相永磁同步电机   无位置传感器   模型参考自适应   波波夫超稳定系统   矢量控制  

摘要： 基于双三相永磁同步电机的矢量空间解耦数学模型,将模型参考自适应算法(model reference adaptive system,MRAS)应用于双三相永磁同步电机的无位置传感器控制。利用波波夫超稳定性理论分析和证明内置式永磁同步电机应用传统的MRAS方案存在一定问题,即取单位矩阵I的线性补偿器,只能在一定转速范围内实现转速辨识。为了使MRAS能够在宽速度范围内有效工作,设计新的线性补偿器,并推导得出新的转速自适应律。通过仿真和实验对所提方法进行验证,结果表明该方法能够实现转子位置和转速的准确辨识,并且具有良好性能。

关键词： 非均匀热物理场   均温热管   均温性   数值仿真   IGBT  

摘要： 针对某大功率、高热流密度梯度、非均匀热物理条件的集成模块,基于均温技术进行传热优化设计研究,应用数值仿真和试验测试的研究方法,将初始无热管方案、倒装方式均温热管方案和正装方式均温热管方案进行对比。结果表明,在相同的风速工况下,倒装方式的均温热管方案相对初始无热管方案散热器温升减小10.3~11.0 K,最大降幅达18%,均温效果最大提升32.5%;相对于倒装方式的均温热管方案,正装方式均温热管方案在温升方面可进一步减小6.9~9.4 K,最大降幅达19.3%,均温效果进一步提升83.6%,传热效率非常显著。

关键词： 线摩擦钢芯带式输送机   电气控制   PLC控制器   变频器   速度跟随  

摘要： 为了实现线摩擦钢芯带式输送机驱动装置功率和输送带带强长距离、大运量的运输目标,在对其基本原理研究的基础上提出了对应电气控制系统的要求,完成了线摩擦钢芯带式输送机电气控制系统的硬件和软件设计,对于实际应用中提升线摩擦钢芯带式输送机运输稳定性和可靠性奠定了基础。