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关键词： Insulated gate bipolar transistors   Switches   Testing   Voltage measurement   Transient analysis   Voltage   Logic gates   Insulated gate bipolar transistors   loss measurement   reliability   semiconductor device testing  

摘要： This letter highlights the importance of appropriate pulsewidth duration of the double-pulse test for the high-voltage insulated gate bipolar transistor modules, in order to obtain the correct switching characterization and avoid underestimation in losses. Otherwise, it might cause improper design in power converters, especially in their thermal management. It demonstrates how the first ON-state pulsewidth during the test needs to be set long enough to characterize the switching-OFF of devices correctly. IGBT modules made by the leading European, Japanese, and Chinese manufacturers with voltage ratings spanning 3.3, 4.5, and 6.5 kV are tested for validation and guidance purposes. Moreover, themechanism and impact factors of this pulsewidth effect are also investigated.

关键词： Insulated gate bipolar transistors   Voltage   Electromagnetic interference   Transient analysis   Switches   Logic gates   Electromagnetic compatibility   EMI   high-voltage pulse   insulated gate bipolar transistors (IGBTs)   switching converters  

摘要： Series-connected insulated gate bipolar transistors (IGBTs) are vastly adopted in high-voltage/power converters. It has been shown in prior researches that shaping the switching element transient voltage to an "S"-shape profile decreases EMI considerably. This article proposes a series-stacked IGBT switch (SSIS) with pulse shaping capability. According to this feature, the voltage of the SSIS has a Gaussian profile in the rising time interval. The method works based on the specific delayed operation of the series-connected IGBTs. In this approach, all IGBTs are turned on/off as fast as possible. Hence, the EMI reduction is not obtained at the expense of the switching power loss increment. Moreover, the power loss relevant to the delayed operation of the IGBTs transfers to the main dc bus. Thus, the overall efficiency is not affected by the proposed approach. In order to validate the proposed approach, PSPICE simulations as well as the experimental results are provided.

关键词： Ambipolar diffusion equation   Finite difference method   IGBT device   PIN diode   SPICE simulation  

摘要： In SPICE simulations of PIN diodes and IGBT devices using finite difference method, one discretizes an undepleted N- region into several equally spaced nodes with a time-dependent distance of delta x(t), and then transforms the ambipolar diffusion equation, a time-space partial differential equation, into a set of time-dependent ordinary differential equations. However, the time-dependent property of delta x(t) destroys the carrier number conservation. In this paper, we propose an approach to correct the effect of the delta x(t) by introducing an auxiliary system. It has the same total current and the total carrier number in the undepleted N- region as the real system, but has different electron and hole current components. The difference is caused by adding compensation current terms with the equal amplitude and opposite sign to the electron and hole current terms in the auxiliary system. These compensation current terms are proportional to the boundary speed of the undepleted N- region and do not change the total current. The auxiliary system can be easily solved using SPICE behavior models and its carrier density is a good approximation to the real one. Our simulations show that the compensation current correction is important for fast switching PIN diodes, but may not be very important in IGBT devices due to their large gate-related capacitance.

关键词： Insulated gate bipolar transistors   Voltage   Partial discharges   Power electronics   Substrates   Flashover   Electronic mail   Hybrid-electric aircraft   IGBT   partial discharges (PD)   power converter   silicone gel  

摘要： The reliability of the insulation of commercially used high-voltage insulated gate bipolar transistor (IGBT) subjected to untimely initiation of partial discharge (PD) at low pressures and high temperatures is investigated and discussed in this letter. To date, no research has addressed the vulnerability of the high-voltage IGBTs to the PDs at harsh environmental conditions for aerospace applications. This letter aims to fill this gap and illustrate the PD characteristics initiated between the electronic components inside the silicone gel. To this end, five commercial 3.3-kV IGBT modules and four 4.5-kV IGBT modules were tested at ac voltage under low pressures (20, 15, and 10x00A0;kPa) and high temperatures up to 120x00A0;C. An efficient PD test method and an anti-series connection configuration are suggested, which emulate a realistic operational scenario for IGBTs together with the one suggested by the current standard. Experimental results reveal the occurrence of inconsistent PDs initiating from possible dynamic PD source inside the gel at low pressures, and more intense and consistent PDs when the temperature increases. It is expected the findings highlight the importance of PD tests on IGBTs at the abovementioned operation conditions and provide a selection and modification guidelines of PD-free IGBTs for manufacturers and engineers in the aerospace industry.

关键词： Insulated gate bipolar transistors   Junctions   Temperature measurement   Inductance   Monitoring   Logic gates   Estimation   Converters   insulated gate bipolar transistors (IGBT)   monitoring   power semiconductor devices   reliability   temperature measurement  

摘要： Insulated gate bipolar transistor (IGBT) junction temperature monitoring is crucial for converter's healthy management and condition monitoring. However, most conventional IGBT junction temperature estimation methods are device-level, which means that monitoring junction temperatures of all IGBTs in converters require the same number of monitoring units as IGBTs, which is of high complexity and cost. A converter-level IGBT junction temperature estimation method based on the dc bus voltage ringing is proposed in this article. The peak values of the bus voltage ringing during switching transient display a linear dependence on the junction temperatures of the corresponding switching IGBTs. Hence, the bus voltage ringing can be used for estimating the junction temperatures of the IGBTs in a converter. The validity of the proposed method is verified by experiments on a double-pulse and three-phase converter. Besides, implementation schemes and calibration approaches for practical applications are discussed. The proposed method has a higher resolution as compared with a traditional ON-state voltage-based IGBT junction temperature monitoring method. Besides, the proposed method reduces the circuit complexity, size, and cost, and it is easy to install. Moreover, the proposed method has a fast response and high resolution, and it does not disturb the normal operation. The proposed method is independent of bond wire degradation of the IGBT module.

关键词： IGBT module   water-cooled heatsink   ANSYS   junction temperature   temperature field   fluent field  

摘要： With the increase of power level and integration in electric vehicle controllers, the heat flux of the key silicon-based IGBT (Insulated Gate Bipolar Transistor) device has reached its physical limit. At present, third-generation semiconductor devices including SiC MOSFETs (Metal-Oxide-Semiconductor Field-Effect Transistor) are gradually replacing the dominant IGBT module. The hybrid IGBT module consists of both and can improve the performance and reduce the cost of controllers. Limits due to the installation space, location, and other conditions in the car make it difficult to meet the requirements of controllers with an air-cooled heatsink due to their large size and limited heat dissipation capacity. A smaller and more powerful water-cooled heatsink case is required to ensure the heat dissipation of the IGBT in the controller. Based on previous experience in finite element numerical simulation, hydrodynamics calculation, and heat transfer calculation, ANSYS Workbench finite element software was used to analyze the thermal resistance of each structure inside the module and the heatsink structure. The fluid characteristics and heat transfer performance of three different flow channel structures were analyzed, and the design of the cooling flow fin was improved to provide a reference for the heat dissipation of the hybrid IGBT module.

关键词： Remaining useful life prediction   Prognostics and health management   Self-attention mechanism   IGBT  

摘要： Insulated gate bipolar transistor (IGBT) is one of the most crucial and fragile components in an electronic system. The remaining useful life (RUL) prediction of IGBTs can precisely forecast the unexpected failure and mitigate the potential risk to guarantee system reliability. In this paper, the IGBTs' run-to-failure (RtF) aging tests are performed to simulate the degradation process, and a self attention-based prognostic framework named SA-MCD is proposed for RUL prediction. 21 hand-crafted candidate features are extracted from the transient thermal impedance curve, and half of the sensitive ones are selected to construct the health indicator (HI) based on the self-attention mechanism. Monte Carlo (MC) dropout is combined to provide the confidence intervals by increasing the uncertainty. For standalone online data, the proposed method is proved valid in making high-precision RUL predictions at an early stage. When offline data is available, the adaptation performance is also excellent by updating the model with a small part of initial online data. Through the comparisons with some popular methods, we confirm our proposed method's superiority.(c) 2021 Elsevier B.V. All rights reserved.