教学课程资源库 更多>>

关键词： Silicon carbide  

摘要： This paper informs the design guidelines, fabrication process, and evaluation of a 1.7-kV and 300-A multi-chip half bridge power module using the novel Si-IGBT and SiC-MOSFET hybrid switch in each switch position. The module achieves its maximum DC current rating with a 6:1 current ratio of Si to SiC. This high current ratio yields significant cost savings compared to an all-SiC power module. The module employs high-reliability silver clips, which replaces conventional wire bonds for top-side interconnection, to partly enable a low power loop inductance of 12.38 nH. A novel thermal pyrolytic graphite-encapsulated metal baseplate is key to reducing the thermal coupling among the adjacent Si and SiC die, enabling higher junction temperature for SiC die relative to the Si die. © 2022

关键词： Insulated gate bipolar transistors   Parameter extraction   Integrated circuit modeling   Switches   Optimization   Behavioral sciences   Charge carrier processes   Automatic optimization   insulated gate bipolar transistors (IGBT)   parameter extraction   physics-based models  

摘要： The physics-based IGBT models have been proved to be very effective in accurately simulating the voltage, current, and carrier dynamics. However, the biggest challenge for those promising models is lack of detailed IGBT device parameters, which chip manufacturers generally seldom reveal. To extract precise and robust device parameters, a novel parameter extraction scheme based on the particle swarm optimization (PSO) algorithm is proposed in this article. The state-of-the-art Fourier-series-based (FSB) IGBT model is used to ensure the accuracy of the parameter extraction scheme. In the proposed scheme, IGBT parameters are simultaneously extracted by IGBT static and dynamic characteristic curves to account for global interaction between all those IGBT parameters during parameter optimization. The experiment is carried out to verify the proposed parameter extraction scheme. It should be noteworthy that only an experimental switching waveform under an arbitrary operating condition is required to implement global searching for the optimal parameters by our proposed scheme. The output characteristic curves and the switching waveforms of the FSB model under different operating conditions using the proposed parameter extraction scheme are in good agreement with the experimental waveforms. Results confirm the effectiveness and usefulness of the obtained device parameters by the randomly selected operating condition. Finally, the global sensitivity analysis is introduced to further demonstrate the reliability of the proposed parameter extraction scheme.

关键词： switch-faults   fault-tolerant   vehicular system   Z-source inverter   induction motor   IGBT  

摘要： This paper presents an efficient and fast fault-tolerant control scheme for a bidirectional Z-source inverter (BiZSI)-fed induction-motor drive system for vehicular applications. The proposed strategy aims for the fault detection, localization and diagnosis of the proposed system during switch failures in the inverter module. Generally, power-semiconductor switch failures in inverter modules occur due to open- and short-circuit faults. An efficient modulation scheme is proposed and design specifications are thoroughly derived to obtain high voltage gains across the BiZSI network. A suitably fast detection and diagnosis scheme to isolate the faulty leg and resume the normal operation is discussed in this paper. The control scheme is provided such that the faulty leg is isolated and the motor phase is fed from a redundant leg to resume the operation. A feasible localization algorithm based on experimentally derived values and switching vectors is implemented. In addition, a fast fault diagnosis method based on current estimation and motor speed variation is designed and implemented. Moreover, the most important advantages of the proposed strategy include lower hardware requirements and less harmonic distortion in the output currents. Finally, the simulation and experimental results are presented to validate the feasibility of the theoretical analysis. An extensive performance evaluation of the proposed system with fault ride-through capabilities is performed to prove its suitability for vehicular applications. To validate its merits, the proposed strategy is compared with similar fault-tolerant schemes currently used in the industry.

关键词： IGBT   multi-timescale   distributed heat source   chip vertical path   temperature distribution  

摘要： Based on extremely uneven temperature distribution along the insulated gate bipolar transistor (IGBT) chip vertical path during switching transients, a short-duration transient microsecond-scale prediction model applicable to multi-timescale simulation is presented in this paper. Traditional thermal models often take the chip active area as a uniform heat source to obtain a victual junction temperature (T-vj). In this paper, a discrete distributed heat source model combined with a thermal network model based on the sublayer division strategy is proposed to achieve an accurate temperature distribution description along the chip vertical path. Taking a 1700 V/3600 A IGBT module as an example, the proposed model can evaluate the short-duration transient temperature distribution along the chip vertical path and the error is less than 2 degrees C compared with the finite element model. Meanwhile, the model is applied to a single short-duration transient timescale and multi-timescale systems separately, and the simulation speed is increased by more than 80 times and 297 times, which verifies its validity and accuracy.

关键词： IGBT   oscillation   S-parameter   short-circuit (SC)   signal flow graph   TCAD  

摘要： The oscillation phenomenon of trench-type insulated gate bipolar transistors during short-circuit (SC) type II was investigated experimentally and theoretically. The gate resistance required to suppress oscillations decreased with an increasing collector voltage. The oscillation conditions were calculated from the signal flow graph model using the S-parameter based on a technology computer-aided design simulation. The calculation results reproduced the locus of the collector voltage dependence of the experimentally measured gate resistance. The oscillation mechanism was investigated using the device simulation. The response of carrier density modulation at the base-drift layer boundary was found to transmit to the collector side through the electron-hole plasma region during the oscillation, indicating that the transfer characteristics of the carrier density modulation in the drift region at the specific collector voltage influence the collector voltage dependence of the SC oscillation. The influence of circuit parameters on the oscillation was also investigated. An increase in the emitter inductance suppressed the oscillations, whereas an increase in gate inductance increases oscillations.

关键词： Silicon carbide  

摘要： Considering the switching frequency limit and electromagnetic interference, the selection of high voltage SiC IGBT and SiC MOSFET is confusing due to punch-through effect and bipolar characteristics of SiC IGBT. The thermal resistance, static characteristics and dynamic characteristics of SiC IGBT and SiC MOSFET module with Press-Pack packaging are measured to evaluate the switching frequency limit and electromagnetic interfere of them. The tradeoffs of SiC IGBT between switching frequency limit and electromagnetic interfere are less attractive due to the intrinsic characteristics, such as high power loss and punch-through effect. The possible solutions for SiC IGBT are proposed based on the improvement of driving resistor and driving voltage. © 2022 The Authors

关键词： Isolation trench   lateral insulated gate bipolar transistor (LIGBT)   short-circuit   short-circuit withstanding time   silicon-on-insulator (SOI)   SOI LIGBT   termination   t(SC)  

摘要： Termination isolation deep-oxide trenches (TITs) are inserted in the emitter side of silicon-on-insulator (SOI) lateral insulated gate bipolar transistor (LIGBT) for electrical isolation. TITs have unstudied effect on electrical characteristics of SOI-LIGBT. In this article, the influence of location and electrical potential of TITs on short-circuit characteristics is investigated. SOI-LIGBTs with different TITs are fabricated and measured, and then, detailed calibrated TCAD simulations are carried out to elucidate the influence of TITs. By adjusting the location of TITs, the electrical potential distribution in the emitter side is reshaped, and the electrical potential at the end of inversion channel (V-ch) is lowered. A lower saturation current is achieved due to the reduced V-ch. TITs with negative electrical potential can attract more holes in the short-circuit condition, which can suppress the activation of parasitic n-p-n transistor. Both reduced I-sat and suppressed latch up can significantly improve short-circuit withstanding time (t(SC)). By optimizing location and electrical potential of TIT, SOI-LIGBT can achieve 69.1% increase in t(SC) at V-CE = 400 V and V-GE = 15 V without influencing other electrical characteristics.

关键词： Temperature measurement   Temperature sensors   Sensors   Presses   Semiconductor device measurement   Insulated gate bipolar transistors   Optical fiber sensors   Fiber Bragg grating (FBG)   junction temperature   press-pack insulated gate bipolar transistor (IGBT) module   quasi-distributed sensing   transient  

摘要： In situ temperature near the chips in a multiple-chip power semiconductor module is important information for thermal design validation, condition monitoring, and overheat protection. Due to the compact packaging structure and clamping force, online detection of the temperature is challenging for a press-pack module. This study attempts to achieve measurement by integrating optical fiber Bragg grating (FBG) sensors into the device. Different integration schemes are examined using experiments and theoretical analysis to show the effects on the transient performance. It is shown that FBG sensors with plate housing can effectively indicate the transient temperature ripple in normal converter operation, owing to the fast dynamic response of a small size sensor. The package integration has only minimal effects on the original distributions of electrical, thermal, and mechanical quantities within the power module.

关键词： Bond wire diagnosis   crosstalk phenomenon   modular multilevel converter (MMC)   multichip insulated gate bipolar transistor (IGBT) module  

摘要： Introducing bond wire diagnosis for multichip insulated gate bipolar transistor (IGBT) modules is key to the health monitoring of modular multilevel converters (MMCs), which allow for improved field robustness, reliability, and reduced maintenance cost. This article leverages the crosstalk phenomenon during switching transitions to detect the chip open-circuit faults caused by the bond wire lift-off using typical half-bridge IGBT modules in a multichip-parallel configuration. The cycle-controlled, nonintrusive measurement is conducted under normal operation, when the device under test is in OFF-state and its complementary switch is during switching transitions. Two specialized health-sensitive parameters arising from the dynamic gate loop waveforms are identified and evaluated, including: 1) the gate voltage V-GE(t3) when the declining collector voltage reaches zero and 2) the negative peak gate voltage V-GE(t4). The sensitivity and stability of these two parameters are compared through theoretical analysis, circuit simulation, and practical verification. The results show that V-GE(t4) is more suitable for online monitoring, while V-GE(t4) is more sensitive than V-GE(t4). With managed complexity in gate drives, this proposed health awareness approach is feasible in the submodules of MMC applications, but it can also be used in other power converter topologies incorporating the half-bridge structure.

关键词： IGBT   HV-(HTRB)-T-3   PoF   EoL   ECM   FIB   LiT   MIP   Aluminium corrosion   Pourbaix diagram  

摘要： In this study, insulated gate bipolar transistor (IGBT) power modules were exposed to high voltage, high humidity, high temperature and reverse bias (HV-H3TRB) conditions until end-of-life (EoL). The limited lifetime of power semiconductor devices when used in demanding applications involving high relative humidity during operation is commonly reported to be associated with the design of the edge termination in power transistor or diode chips. A physics-of-failure (PoF) oriented methodology was adopted in failure analysis, including using lock-in thermography (LiT) for failure localisation and using an advanced microwave-induced plasma (MIP) decapsulation technique for the selective etching of the edge termination polyimide passivation film. A focused ion beam (FIB) was utilised to create a cross-section of the samples for both scanning electron microscopy (SEM) and energy dispersive X-ray spectroscopy (EDX) analysis. The evidence gathered using the physics-of-failure methodology were compared with the results from advanced statistical analysis of the failure distributions in Weibull plots, including comparison of alpha and beta parameters. This analysis revealed correlation with the Weibull distributions and the results from the physics-of-failure. Aluminium corrosion products were systematically observed on guard rings (GR) and field plates (FP) showing that the migration of these corrosion products forming an electrical path between the guard rings that seems to be a major failure mechanism in high humidity environments when reverse bias voltage is applied.