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关键词： 新能源汽车   智能汽车   互动平台   家电产品   风力发电   测试验证   IGBT   项目进展  

摘要： 闻泰科技在互动平台表示,公司IGBT已成功流片,尚在测试验证阶段。IGBT这类产品的应用市场广泛,主要面向新能源汽车、光伏/风力发电、工业控制、家电产品等领域。目前公司在智能座舱领域为头部智能汽车品牌配套的项目进展顺利,即将量产。

关键词： 煤化工   风机   泵   变频器   调速   节能  

摘要： 煤化工工程中的风机、泵类负荷通常采用调节阀来实现流量调节,但通过实际运行数据发现,该状态下电机的实际输出功率较大,能量多浪费在调节阀上;若采用变频调速控制同样能实现流量调节功能,并且根据功率与转速的关系可知变频调速控制节能效果显著。现针对高压和低压变频器分别给出了不同的控制方案,包含一次主回路及二次原理图,并探讨了高、低压变频器选型时的注意事项。

关键词： 车辆工程   轮毂电机   死区效应   非线性特性   前馈控制   扰动电压观测器  

摘要： 为了改善车用永磁同步轮毂电机矢量控制系统的控制性能,针对该系统逆变器中死区时间、开关等元器件的非线性死区效应问题,对死区效应的产生机理和对电流谐波产生的影响进行了分析;在不需要电流极性检测的基础上,提出了一种新的死区补偿方法;根据前馈控制的思路,通过建立死区扰动电压观测器并与线性补偿法相结合的方式,来抵消死区效应对永磁同步轮毂电机矢量控制系统的影响;利用MATLAB/Simulink仿真软件建立了基于新型死区补偿的永磁同步轮毂电机矢量控制仿真模型。仿真结果证明:该死区补偿方法能有效地抑制逆变器死区效应带来的影响,提高了矢量控制系统的稳定性。

关键词： 三端口DC-DC变换器   双有源桥   移相控制   内移相控制   电流应力优化  

摘要： 针对双Buck-Boost集成双有源桥型三端口直流变换器高频链的电流应力优化问题,提出相应的控制方法.为了实现对各个端口电压与功率的调节,高频变压器原边采用占空比控制,原、副边之间采用移相控制.副边2个桥臂之间的内移相角可以作为第3个控制量,以实现优化控制目标;提出在传统控制方法的基础上引入副边桥臂间的内移相控制,实现优化高频链电流应力的效果.建立三端口直流变换器高频链各模式下电流应力优化问题的数学模型,给出电流应力优化的实现条件.搭建500 W的实验样机,对所提的电流应力优化控制方法进行实验验证.结果表明,利用该方法可以有效地降低高频链的电流应力,提升系统效率,负载端口轻载时的效果更加明显.

关键词： LLC感应加热电源   IGBT   并联电容   开关损耗  

摘要： 在扫频抑制方式下,LLC感应加热电源中IGBT的开关损耗很大,可以在IGBT的CE两端串联电容,以减小开关损耗。文章分析关断状态下的电路,确定IGBT的开关损耗和IGBT两端串联电容的容量相关,然后以此为参照选择适当的串联电容值,可以同时满足IGBT的零电压开关(ZVS)要求和减小IGBT的开关损耗的要求。经过测试,证明了这种方法的有效性。

关键词： 石油钻机   西门子变频器   常见故障   处理措施  

摘要： 石油钻机使用交流变频技术节约能耗,并满足钻井生产工艺要求,让钻井机械结构得到简化,实现低碳环保目标,对于钻井开发远期发展有重要意义。分析西门子变频器的结构和原理,介绍常见的故障及处理措施,以西门子6SE70变频器为例介绍故障案例及处理方法,并提出变频器应用建议。

关键词： Coils   Insulated gate bipolar transistors   Topology   Power supplies   Control systems   Inductance   Clocks   ASDEX Upgrade (AUG)   flywheel generator (FG)   IGBT   modular multilevel converters (MMCs)   nuclear fusion   power supplies   supercapacitor (SC)  

摘要： The modular multilevel converter (MMC) has become one of the most attractive converters for high-power applications such as high-voltage dc (HVDC) converters, but also fusion devices' power supplies. This converter, thanks to the discrete-leveled output voltage and its identical submodules (SMs) by which it is composed, represents a promising alternative to replace the flywheel generator (FG) that actually provides electrical power to Axially Symmetric Divertor Experiment (ASDEX) Upgrade device's toroidal field (TF) coils. Due to the pulsed dc operation of these coils and their high-power needs (up to 150 MW) for each experiment, a small-scale version of MMC is under development with some differences compared with conventional ones: SM's capacitors have been replaced with supercapacitor (SC) modules to increase the amount of available stored energy, while SMs belonging to different "rows" are interconnected to simplify their control and increase the reliability of the converter. This article shows the development and the operation of a single IGBT full-bridge (FB) SM highlighting advantages of this configuration and challenges of a full-scale converter: a proper power stage filter has been designed to protect SCs from voltage spikes and high-frequency current content generated during IGBT switching events, while SM's control has been realized, thanks to the EtherCAT protocol, which ensures synchronization in case of SMs' parallel operation and reliability of the future full-scale converter.

关键词： Silicon-on-insulator   Germanium   Logic gates   Insulated gate bipolar transistors   Electric potential   Electron devices   Sun   Lateral IGBT   lateral insulated gate bipolar transistor (LIGBT)   low saturation current   short-circuit   silicon-on-insulator (SOI)   SOI LIGBT   trench  

摘要： For the first time, a silicon-on-insulator (SOI) lateral insulated gate bipolar transistor (LIGBT) featuring segmented deep oxide trenches (SDOTs) is proposed, which aims to suppress the saturation current ( $I_{sat}$ ) and enhance the short-circuit withstanding capability. SDOTs, refilled by the polysilicon and shorted to the emitter electrode, are inserted in the region nearby the inversion channel. In the on-state, the electric potential at the channel end can be modified and effectively lowered by the grounded SDOTs, which indicates the reduced $I_{sat}$ and prolonged short-circuit withstanding time ( $t_{SC}$ ). Compared with the conventional SOI LIGBT, the proposed SOI LIGBT achieves a 49.5% decrease in $I_{sat}$ at $V_{CE} = 10$ V and $V_{GE} = 15$ V, and a 406% increase in $t_{SC}$ at $V_{CE} = 400$ V and $V_{GE} = 15$ V.

关键词： Insulated gate bipolar transistors   Mathematical models   Semiconductor device modeling   Transient analysis   Steady-state   MOSFET   Charge carrier processes   First-order approximation   insulated-gate bipolar transistor (IGBT)   small perturbation   transient model  

摘要： Improvements in device function of insulated-gate bipolar transistors (IGBTs) have led to increasingly widespread IGBT use in new energy generation, electric vehicles, dc power transmission, and other applications. To meet the requirements for study of IGBT electromagnetic transient behavior in complex applications, this article studies IGBT transient behavior. Based on an assumption of small perturbation and using the first-order approximation in the time domain, the ambipolar transport equation is approximated, and the relationship between the current and voltage components in the IGBT is deduced by combining this equation with basic semiconductor physics theory;this allows the transient model of the IGBT in the on-state to be constructed. The differences between the proposed transient model and the traditional steady-state model when predicting the IGBT's voltage and current characteristics are compared, and the accuracy of the proposed model is verified via comparison of the results of experiments and simulations using the flyback topology.

关键词： critical failures mechanisms   low-frequency transformers   IGBT devices   on-line diagnostic method   isolated multilevel inverter  

摘要： An online failure diagnostic test is essential to ensure the robustness and reliability of high-powered systems. Furthermore, the overall design must comprise diagnostic strategies to detect in-service and high-powered module defects. This paper describes the critical failure mechanisms--cross-conduction, inductive avalanche, second turn-on, VS-undershoot, inrush current, and thermal runaway--that directly affect insulated gate bipolar transistor (IGBT) operation. The constructed inverter contains 18 transformer-based taps (six per phase);however, this work studied a single tap (IGBT-based full-bridge module) to understand the reasons for failure and the routes to mitigate them. Moreover, a cost-effective solution using the IR2127STRPBF driver circuit was implemented to reduce the probability of thermal runaway in case of overcurrent, short-circuit, or avalanche events. For this reason, the electrical current state was adjusted using an FPGA digital resource to perform dynamic PWM control signals. The obtained correlation waveforms are valuable for verifying diagnostic data at the design stage to emphasize the significance of evading premature failure events. The comprehensive study on failure diagnosis enabled successful design strategies to construct a robust 45 kVA three-phase multilevel inverter for a 22 kW eolic-photovoltaic generation plant.