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关键词： IGBT   multi-timescale   distributed heat source   chip vertical path   temperature distribution  

摘要： Based on extremely uneven temperature distribution along the insulated gate bipolar transistor (IGBT) chip vertical path during switching transients, a short-duration transient microsecond-scale prediction model applicable to multi-timescale simulation is presented in this paper. Traditional thermal models often take the chip active area as a uniform heat source to obtain a victual junction temperature (T-vj). In this paper, a discrete distributed heat source model combined with a thermal network model based on the sublayer division strategy is proposed to achieve an accurate temperature distribution description along the chip vertical path. Taking a 1700 V/3600 A IGBT module as an example, the proposed model can evaluate the short-duration transient temperature distribution along the chip vertical path and the error is less than 2 degrees C compared with the finite element model. Meanwhile, the model is applied to a single short-duration transient timescale and multi-timescale systems separately, and the simulation speed is increased by more than 80 times and 297 times, which verifies its validity and accuracy.

关键词： IGBT   oscillation   S-parameter   short-circuit (SC)   signal flow graph   TCAD  

摘要： The oscillation phenomenon of trench-type insulated gate bipolar transistors during short-circuit (SC) type II was investigated experimentally and theoretically. The gate resistance required to suppress oscillations decreased with an increasing collector voltage. The oscillation conditions were calculated from the signal flow graph model using the S-parameter based on a technology computer-aided design simulation. The calculation results reproduced the locus of the collector voltage dependence of the experimentally measured gate resistance. The oscillation mechanism was investigated using the device simulation. The response of carrier density modulation at the base-drift layer boundary was found to transmit to the collector side through the electron-hole plasma region during the oscillation, indicating that the transfer characteristics of the carrier density modulation in the drift region at the specific collector voltage influence the collector voltage dependence of the SC oscillation. The influence of circuit parameters on the oscillation was also investigated. An increase in the emitter inductance suppressed the oscillations, whereas an increase in gate inductance increases oscillations.

关键词： Silicon carbide  

摘要： Considering the switching frequency limit and electromagnetic interference, the selection of high voltage SiC IGBT and SiC MOSFET is confusing due to punch-through effect and bipolar characteristics of SiC IGBT. The thermal resistance, static characteristics and dynamic characteristics of SiC IGBT and SiC MOSFET module with Press-Pack packaging are measured to evaluate the switching frequency limit and electromagnetic interfere of them. The tradeoffs of SiC IGBT between switching frequency limit and electromagnetic interfere are less attractive due to the intrinsic characteristics, such as high power loss and punch-through effect. The possible solutions for SiC IGBT are proposed based on the improvement of driving resistor and driving voltage. © 2022 The Authors

关键词： Isolation trench   lateral insulated gate bipolar transistor (LIGBT)   short-circuit   short-circuit withstanding time   silicon-on-insulator (SOI)   SOI LIGBT   termination   t(SC)  

摘要： Termination isolation deep-oxide trenches (TITs) are inserted in the emitter side of silicon-on-insulator (SOI) lateral insulated gate bipolar transistor (LIGBT) for electrical isolation. TITs have unstudied effect on electrical characteristics of SOI-LIGBT. In this article, the influence of location and electrical potential of TITs on short-circuit characteristics is investigated. SOI-LIGBTs with different TITs are fabricated and measured, and then, detailed calibrated TCAD simulations are carried out to elucidate the influence of TITs. By adjusting the location of TITs, the electrical potential distribution in the emitter side is reshaped, and the electrical potential at the end of inversion channel (V-ch) is lowered. A lower saturation current is achieved due to the reduced V-ch. TITs with negative electrical potential can attract more holes in the short-circuit condition, which can suppress the activation of parasitic n-p-n transistor. Both reduced I-sat and suppressed latch up can significantly improve short-circuit withstanding time (t(SC)). By optimizing location and electrical potential of TIT, SOI-LIGBT can achieve 69.1% increase in t(SC) at V-CE = 400 V and V-GE = 15 V without influencing other electrical characteristics.

关键词： Temperature measurement   Temperature sensors   Sensors   Presses   Semiconductor device measurement   Insulated gate bipolar transistors   Optical fiber sensors   Fiber Bragg grating (FBG)   junction temperature   press-pack insulated gate bipolar transistor (IGBT) module   quasi-distributed sensing   transient  

摘要： In situ temperature near the chips in a multiple-chip power semiconductor module is important information for thermal design validation, condition monitoring, and overheat protection. Due to the compact packaging structure and clamping force, online detection of the temperature is challenging for a press-pack module. This study attempts to achieve measurement by integrating optical fiber Bragg grating (FBG) sensors into the device. Different integration schemes are examined using experiments and theoretical analysis to show the effects on the transient performance. It is shown that FBG sensors with plate housing can effectively indicate the transient temperature ripple in normal converter operation, owing to the fast dynamic response of a small size sensor. The package integration has only minimal effects on the original distributions of electrical, thermal, and mechanical quantities within the power module.

关键词： Bond wire diagnosis   crosstalk phenomenon   modular multilevel converter (MMC)   multichip insulated gate bipolar transistor (IGBT) module  

摘要： Introducing bond wire diagnosis for multichip insulated gate bipolar transistor (IGBT) modules is key to the health monitoring of modular multilevel converters (MMCs), which allow for improved field robustness, reliability, and reduced maintenance cost. This article leverages the crosstalk phenomenon during switching transitions to detect the chip open-circuit faults caused by the bond wire lift-off using typical half-bridge IGBT modules in a multichip-parallel configuration. The cycle-controlled, nonintrusive measurement is conducted under normal operation, when the device under test is in OFF-state and its complementary switch is during switching transitions. Two specialized health-sensitive parameters arising from the dynamic gate loop waveforms are identified and evaluated, including: 1) the gate voltage V-GE(t3) when the declining collector voltage reaches zero and 2) the negative peak gate voltage V-GE(t4). The sensitivity and stability of these two parameters are compared through theoretical analysis, circuit simulation, and practical verification. The results show that V-GE(t4) is more suitable for online monitoring, while V-GE(t4) is more sensitive than V-GE(t4). With managed complexity in gate drives, this proposed health awareness approach is feasible in the submodules of MMC applications, but it can also be used in other power converter topologies incorporating the half-bridge structure.

关键词： IGBT   HV-(HTRB)-T-3   PoF   EoL   ECM   FIB   LiT   MIP   Aluminium corrosion   Pourbaix diagram  

摘要： In this study, insulated gate bipolar transistor (IGBT) power modules were exposed to high voltage, high humidity, high temperature and reverse bias (HV-H3TRB) conditions until end-of-life (EoL). The limited lifetime of power semiconductor devices when used in demanding applications involving high relative humidity during operation is commonly reported to be associated with the design of the edge termination in power transistor or diode chips. A physics-of-failure (PoF) oriented methodology was adopted in failure analysis, including using lock-in thermography (LiT) for failure localisation and using an advanced microwave-induced plasma (MIP) decapsulation technique for the selective etching of the edge termination polyimide passivation film. A focused ion beam (FIB) was utilised to create a cross-section of the samples for both scanning electron microscopy (SEM) and energy dispersive X-ray spectroscopy (EDX) analysis. The evidence gathered using the physics-of-failure methodology were compared with the results from advanced statistical analysis of the failure distributions in Weibull plots, including comparison of alpha and beta parameters. This analysis revealed correlation with the Weibull distributions and the results from the physics-of-failure. Aluminium corrosion products were systematically observed on guard rings (GR) and field plates (FP) showing that the migration of these corrosion products forming an electrical path between the guard rings that seems to be a major failure mechanism in high humidity environments when reverse bias voltage is applied.

关键词： Superconducting magnets   Contacts   Switches   Magnetic circuits   Large Hadron Collider   High-temperature superconductors   Superconducting coils   DC switches   hybrid dc circuit breaker   IGBT   power semiconductor devices   quench protection   superconducting magnet   thyristors   ultrafast switches  

摘要： The article presents a new family of low voltage dc switching energy extraction (EES) systems designed for protection of superconducting magnet circuits at CERN, which is appropriate also in other applications. During normal operation, superconducting magnet circuits can store large amounts of energy in their magnetic fields. In the case of a resistive transition (known as "quench"), this energy may be dangerous as it can lead to high temperatures and voltages, eventually damaging the superconducting magnet coils. To prevent this, the magnetic energy must be extracted and dissipated outside the superconducting windings. For this purpose, dedicated energy absorbers are introduced in the circuit by means of opening of dc switches. For the protection of future superconducting magnet circuits at CERN, direct current switching systems (DCSS) with rated currents of 2000 and 600 A have been developed and qualified. Each DCSS is unpolarized and redundant, i.e., composed of two identical direct current switch (DCS) connected in series. Two methods for the current commutation toward the energy absorber element have been investigated, the first one based on IGBT and the second one based on thyristors. A high-power, inductive-dynamic drive provides the ultrafast opening of the vacuum interrupter in the DCS.

关键词： RC-IGBT   switching energy consumption   voltage snapback   free wheeling diode   oxide trench  

摘要： This paper presents a 1200V-class reverse conducting insulated gate bipolar transistor (RC-IGBT) with low switching energy consumption (LE-RC-IGBT). Its structure was designed in accordance with the latest enhanced trench and field stop technology while incorporating an anti-parallel Free Wheeling Diode (FWD) between the adjacent FS-IGBT cells. With the Emitter Shorted Diode (ESD) technology employed in the design of the FWD structure, the FWD and FS-IGBT can be made simultaneously. By using the same trench etching technique of the gate process, oxide trench was formed on the back side of the device to increase the short-circuit resistance between the N+ Collector and the P+ Collector on the back of the RC-IGBT. The voltage snapback phenomenon of the conventional RC-IGBT was completely eliminated. The electrical characteristics of the RC-IGBT were investigated by using Sentaurus-TCAD. Simulation results show that the switching energy consumption of the proposed LE-RC-IGBT is reduced by approximately 50%compared with the conventional one.