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关键词： 可编程逻辑控制器   包装机   变频调速   变频器  

摘要： 目的在包装机变频调速控制系统设计中,受到控制方式的影响,使得控制系统所需能耗较高,为提高控制系统效能,基于PLC技术提出包装机变频调速控制系统设计。方法硬件部分,对可编程控制箱、变频器进行设计。软件部分,通过变频器参数的设计保证变频调速系统正常运行。针对PLC技术,设计控制系统中所需的PLC程序,达到控制包装机变频调速的效果。依靠触摸屏的方式呈现PLC程序输出结果,最终完成包装机变频调速控制系统的设计。结果实验结果表明,文中设计的控制系统与2种传统控制系统相比,所需能耗分别降低了49.5%和39.2%。结论控制系统运行所需的能耗降低,该设计在实际应用中具有良好的效果。

关键词： planar gate   carrier stored (CS) layer   floating-P region   breakdown voltage (BV)   on-state voltage drop (v (ceon))   turn off loss (e (off))   saturated collector current density (j (sat))  

摘要： A novel dual injection enhanced planar gate insulated gate bipolar transistor (IGBT) with self-adaptive hole path (DIE-PIGBT) is proposed. A floating-P region is applied behind the emitter-connected deep trench in z direction and contacted with the N-type carrier stored (N-CS) layer for the proposed IGBT. Compared to the conventional trench shielded planar gate IGBT (CTS-PIGBT), the proposed device further alleviates the negative impact of the N-CS layer on the breakdown voltage (BV) and reduces both the on-state voltage drop (V (ceon)) and saturated collector current density (J (sat)). Simulation results show that with the same device thickness of 400 mu m, the BV are 4625 V and 4275 V for the proposed and conventional device, respectively. The V (ceon) at 75 A cm(-2) is 2.51 V for the proposed DIE-PIGBT, which is 1.13 V lower than that of the CTS-PIGBT. Furthermore, with similar BV to the conventional one, the device thickness can be reduced to 355 mu m for the DIE-PIGBT. Pro. The total gate charge (Q (G)) and miller plateau charge (Q (GC)) for the proposed device are reduced by 61.0% and 89.9%, respectively. As a result, the proposed structure has better trade-off relationship between the V (ceon) and turn-off loss (E (off)). At the same V (ceon) of 2.51 V, the E (off) for the DIE-PIGBT and DIE-PIGBT. Pro are 45.17 mJ cm(-2) and 41.01 mJ cm(-2), which is reduced by 44.0% and 49.1% when compared to 80.61 mJ cm(-2) of the CTS-PIGBT, respectively. Moreover, the J (sat) is reduced from 619 A cm(-2) for the CTS-PIGBT to 368 A cm(-2) for the DIE-PIGBT under the V (ge) of 15 V. The short-circuit withstand time of the DIE-PIGBT is 1.9 times larger than that of the conventional device.

关键词： IGBT   Stepped oxide   Switching   RESURF   Energy loss  

摘要： In this article, a gate engineering technique is used in Insulated gate bipolar transistor (IGBT) for fast switching applications. The modification consists of stepped oxide pattern at gate terminal with n-poly layer sandwiched between two p-poly layers. The oxide thickness increases from top to bottom so as to create a stepped structure. The oxide thickness is lesser on channel side and higher on collector side. The less thickness beside the channel increases gate to emitter charges (Q(GE)) by extracting extra charges along the channel. The presence of these extra charges also increases the collector current density resulting reduction in the area specific on-resistance (R-on.A). On the other hand, the higher thickness at the bottom side of gate offers reduction in gate to collector charges (Q(GC)). Furthermore, to elongate the impact of Q(GC) reduction, the low doped p-col region has been facilitated which also play an important role to increase the breakdown voltage by reducing corner electric field. This p-col region creates charge extraction path to swept out charges from the drift region while turn-off event and makes the device to turn-off quickly. The collective improvement in Q(GE) and Q(GC) provides fast switching to the proposed device by improving turn-off time by 63% and also reduces turn-off loss (E-off) by 55% as compared to the conventional device. Furthermore, the change in the workfunction also provides the reduction of channel peak electric field and offers 10% increment in the BV as compared to the conventional IGBT.

关键词： FC302   PRIFINET   S7-300  

摘要： 以丹弗斯F302变频器和西门子CPU315-2(PN/DP)为例,阐述了在卷烟企业的生产车间升级改造,由原来的西门子CPU315-2(以下简称S7-300)端子控制丹福斯FC302变频器(以下简称FC302变频器)的正转启动和多段速运行,升级改造为PROFINET通信控制,既减少了硬件接线,又提高了生产的效率和优化了产品生产控制的流程,也降低了成本。

关键词： 碳化硅MOSFET   硅IGBT   串联短路  

摘要： 针对因器件击穿、控制失效等问题导致的串联短路现象,基于半桥结构分析了SiC MOSFET及Si IGBT不同的串联短路动态分压特性。同时,结合开关过程中电压、电流的变化分析串联短路分压原理,并在输出特性曲线上标注器件的分压路径。实验结果表明,驱动电压、负载电流、母线电压等外部驱动参数对两种器件串联短路分压特性的影响不同,其中反向负载电流改变了串联短路的分压趋势且对串联短路特性影响最大。充分认识器件的串联短路机理对改进短路保护具有现实意义。

关键词： 新能源汽车   电源产品   电源系统   主机厂   市场份额   客户拓展   海外业务   变频器  

摘要： 11月8日,汇川技术在接受调研时表示,近几年,国产替代进程加快,公司变频器、何服、PLC等核心产品的市场份额也提升较快。目前公司海外业务占比较小,今年公司加快了人员出海的节奏,并启动了欧洲工厂的建设。新能源汽车电驱和电源系统业务,联合动力的品牌借助近几年客户拓展和定点落地,已经得到国内外主流主机厂的认可,特别是在海外市场实现电源产品持续定点,公司预计未来会给公司新能源汽车领域相关业务的快速增长提供较好支撑。

关键词： 带式输送机   煤量监测装置   变频器   节能  

摘要： 传统带式输送机设计通常按其最大运量考虑,实际的运量在空载与满载之间变化,容易出现大马拉小车现象,长期高速轻载或空载运行,不但增加设备的机械磨损同时浪费了大量电能。针对此问题,多种形式、多种功能的煤量监测变频调速控制系统在矿用带式输送机中被大量使用。研究发现,单纯变频器在输送机上的应用并不能实现节能,但结合煤量监测装置开发的带式输送机变频调速控制系统能够做到煤多快运、煤少慢运、没煤怠速或停机,从而真正实现节能增效的目的。

关键词： 开关磁阻电机   直接转矩控制   转矩脉动  

摘要： 在开关磁阻电机的驱动中,采用直接转矩控制可以显著地改善其输出转矩的稳定性和转矩响应的快速性,而且该算法具有较好的通用性。从控制角度入手,研究降低开关磁阻电机噪声和减小转矩脉动的方法。针对传统直接转矩控制方法转矩脉动大的问题,提出了一种适用于四相开关磁阻电机的电压矢量和开关表的优化方法,取消了磁链滞环,重构了电压矢量。仿真和实验证明,该方法在转速稳定状态下可有效减小转矩脉动并提高转矩电流比。

关键词： 高压大功率变频器   高压变频器   电动给水泵   循环水冷却系统   配套改造   顺利投运   锅炉给水泵   变频改造  

摘要： 本项目由东方日立提供电动给水泵变频改造整体解决方案,采用了两台DHVECTOL-HFP系列14MW水冷高性能锅炉给水泵专用高压大功率变频器,配备了安全可靠的密闭式循环水冷却系统,同时对耦合器进行了配套改造。机组投运后,给水系统调节稳定,各项参数良好,给水泵能耗明显降低。

关键词： 储库   轻烃泵   屏蔽泵   变频器  

摘要： 轻烃外输泵既是轻烃储库生产运行重要设备,也是高耗能设备,不同额定流量的轻烃泵,能耗差异较大。针对此问题,选择某轻烃储库的轻烃泵开展现场试验。通过模拟不同排量与泵效预期曲线,在机泵最佳工况范围内增大外输流量,记录机泵电流、出口压力、流量,振动参数变化对机泵工作状态影响,分析不同排量下轻烃泵最优运行方案。优化后,减少了机泵启停频次,至少节约能耗约16.7%,降低了轻烃储库生产运行成本。