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关键词： insulated gate bipolar transistor (IGBT)   Junction temperature   Parameter self -correction   Solder layer aging   Thermal network model  

摘要： A parameter self-correcting thermal network model is proposed in this paper, and then the accurate junction temperature of the IGBT solder layer after aging is calculated. Considering that the voids and cracks generated by the aging of the solder layer of the IGBT module affect the parasitic capacitance and common mode interference signal of the power supply circuit in which it is located, the common mode interference signal of the IGBT module can be monitored for the aging state of the solder layer. When the IGBT module solder layer is aging, the thermal resistance and thermal capacity of the thermal network model are calculated based on the common -mode interference signal, and the thermal network model is modified to calculate the exact junction tempera-ture. The major advantage of this method is that the online self-correction of the thermal network model pa-rameters can be realized. Finally, the correctness and effectiveness of the proposed method are confirmed by simulation and experiment.

关键词： Accurate current pulse   breaker   circuit breaker   circuit interrupter   decoupling   fast response   fast rise time   high current   high voltage   IGBT   interrupter   metal-oxide-varistor (MOV)   pulse generator   pulse power   pulse quality   waveform shaping   zero current switching (ZCS)  

摘要： High power one-shot pulse generators that respond quickly to a trigger are needed for industrial, scientific, and medical applications. A fast-response, flat-top current pulse can help dc circuit interrupters achieve zero current switching, which alleviates arcing, reduces semiconductor device stress, and improves circuit design. We overcome several challenges in designing high-voltage and high-current accurate pulse generators, including the following: first, parasitics from the necessary large physical format that degrade pulse quality and complicate design;second, modularity that is economical in using fewer lower voltage semiconductor switches;third, optimality in the tradeoff among response time, pulse flat-top duration, and component selection. We present a design method and hardware results for a modular 4.5 kV pulse generator that delivers a 100 A peak current pulse for an 800 ns flat-top duration and +/- 1% accuracy, which can potentially scale to tens of kilovolts.

关键词： SRT converter   Hybrid switching   Battery charger   DC   DC converter   Electric vehicle  

摘要： In this study, we propose a design method for a 6.6 kW charger using a hybrid switching technique that operates an insulated-gate bipolar transistor (IGBT) and metal-oxide-semiconductor field-effect transistor (MOSFET) in parallel for the high frequency of IGBT. The proposed circuit is based on a secondary resonant tank (SRT) converter with a resonant tank placed on the secondary side. In the SRT converter, the lower switches can be configured using only IGBTs, because the switching loss is small;however, configuring the upper switches only with IGBTs is difficult owing to the high turn-off current. This disadvantage can be overcome by operating the IGBTs and MOSFETs in parallel. IGBTs and MOSFETs are responsible for the conduction loss and switching loss, respectively. The feasibility of the proposed circuit was verified through the design and experimental results of a prototype with input and output voltages of 600-750 and 450-900 V, respectively.

关键词： Insulated gate bipolar transistors   Aging   Temperature   Thermal resistance   Temperature sensors   Solid modeling   Resistance   Aging monitoring   electrothermal analysis   insulated gate bipolar transistor (IGBT) module   temperature observer  

摘要： Most of the existing methods for electrothermal analysis of the aging insulated gate bipolar transistor (IGBT) modules have limitations on performing synchronous recognition and decoupling of two typical aging models, and failed to be low-invasive and real-time. To address this, two characteristic functions are developed in this article. The characteristic functions are derived from the temperature response under periodic power loss excitation and can be extracted in real-time and low-invasively from the negative temperature coefficient (NTC) thermistor sensor integrated into the IGBT module. Then, a temperature observer based on the 3-D state-space model of the IGBT module is designed, which is based on the feedback from the characteristic functions, to achieve the target of online electrothermal analysis for the IGBT module even with the significant deterioration of the IGBT module. Finally, the performance of the proposed method is thoroughly investigated by extensive experimental tests.

关键词： Insulated gate bipolar transistors   Voltage measurement   Insulation   High-voltage techniques   Discharges (electric)   Electrodes   Partial discharges   Positive square wave voltage   high voltage IGBT   partial discharge (PD) pulses extraction   PD identification  

摘要： The insulation of insulated gate bipolar transistor (IGBT) modules is one of the key constraint factors in module development. It is significant to realize the accurate measurement of partial discharge (PD) and its identification of the insulation weaknesses under positive square wave voltage. In this article, a PD experimental platform under this voltage is established. Three main possible insulation weaknesses of high voltage IGBT modules are selected as experimental samples, including chip, silicone gel, and the interface between direct bonded copper and silicone gel. Then, PD current waveforms of them are measured. To solve the interference caused by high du/dt at the rising/falling edge of voltage, a distortionless extraction method of PD pulses independent of any auxiliary detection equipment is proposed. Based on this method, the PD phase distributions of three samples are obtained and there are distinct differences among them. Thus, the PD types in high voltage modules can be identified effectively. In addition, qualitative explanations of the differences in the typical PD characteristics are presented. The proposed PD identification method is experimentally verified and can guide the insulation design and fabrication of high voltage IGBT modules.

关键词： Average thermal model   finite element method (FEM)   insulated gate bipolar transistors (IGBT)   junction temperature estimation   thermal model extraction  

摘要： The junction temperature of the insulated gate bipolar transistor (IGBT) modules is a vital parameter for the reliability of the power electronic system. For effective thermal management, it is necessary to estimate junction temperature in real time. However, existing thermal models have limitations to achieve fast temperature estimation for multichip IGBT modules. In this article, we investigate the real-time junction temperature estimation for multichip IGBT modules with low computational cost. According to the power module' structure, an average 2-D thermal model with physical significance is proposed to estimate the virtual junction temperature for multichip IGBT modules, which can be extracted from finite element model based on the least square method. To further improve the computational efficiency, a temperature estimator based on the staggered cycle-by-cycle calculation method is proposed and its estimation error under various extreme operation conditions is analyzed by enumeration method. Finally, the comprehensive experimental results verify the effectiveness of the proposed average thermal model and junction temperature estimation method.

关键词： RC-IGBT   reverse recovery characteristics   IGBT characteristics  

摘要： In this paper, a low switching loss built-in diode of a high-voltage reverse-conducting insulated gate bipolar transistor (RC-IGBT) is proposed without deteriorating IGBT characteristics. It features a particular shortened P+ emitter (SE) in the diode part of RC-IGBT. Firstly, the shortened P+ emitter in the diode part can suppress the hole injection efficiency resulting in the reduced carriers extracted during the reverse recovery process. The peak of the reverse recovery current and switching loss of the built-in diode during reverse recovery is therefore lowered. Simulation results indicate that the diode's reverse recovery loss of the proposed RC-IGBT is lowered by 20% compared with that of the conventional RC-IGBT. Secondly, the separate design of the P+ emitter prevents the performance of IGBT from deteriorating. Finally, the wafer process of the proposed RC-IGBT is almost the same as that of conventional RC-IGBT, which makes it a promising candidate for manufacturing.

关键词： High voltage dc power supply   IGBT   Pulse step modulation   PSM   Neutral beam injection   ELISE   Negative ion source  

摘要： The Neutral Beam Injection (NBI) system of ITER shall provide 33 MW heating power to the plasma for up to one hour by two injectors. The beam lines will be based on large RF-driven sources for negative hydrogen or deuterium ions. The test facility ELISE (Extraction from a Large Ion Source Experiment) at IPP Garching is supporting the ion source development for ITER with an ion source of 1 x 1 m(2) (half the size of the ITER source). While plasma operation of ELISE is possible for up to one hour, the extraction and acceleration of a negative ion beam (up to 60 kV) was initially possible only for X10 s every X150 s with the old power supply. During such pulses the temporal behavior of the co-extracted electrons significantly depends on whether beam extraction is switched on or off. Thus, continuous wave (CW) extraction is mandatory for developing fully ITER relevant operational scenarios and recently, a steady state power supply for beam extraction has been installed at ELISE. This power supply consists of two stages connected in series: a first stage with 12 kV / 70 A, providing 35 A for the extracted negative ion current, with a 35 A overhead for co-extracted electrons. The second stage of 50 kV / 35 A is used for the further acceleration of only the ions to a total potential of 60 kV. The two stages have an electrical active power of 1.75 MW and 0.84 MW respectively. The power supply operates with pulse step modulation. Bipolar transistors with insulated gate electrodes (IGBT) are used as electrical switches on the DC side. The 50 kV stage consists of 64 modules in series and the 12 kV stage has 24 modules. Both stages are controlled synchronously and must detect breakdowns between the grids in a mu s range.

关键词： Parallel flow  

摘要： A new flow channel of an Insulated Gate Bipolar Transistor (IGBT) chip cooling plate is proposed. It is called a Streamline Counterflow Flow Channel (SCFC) which combines the structural features of two conventional flow channels, the Streamline Flow Channel (SFC) and the Counterflow Flow Channel (CFC). Numerical simulation models of cooling plates for multiple heat source (IGBT chips) with SCFC, Parallel Flow Channel (PFC), SFC and CFC are established to compare their thermal performance. The results show that the PFC has the best temperature uniformity, the SFC has the best pressure drop and thermal efficiency, and the CFC is in the middle. The SCFC has the lowest maximum temperature among the flow channels and performs well across a range of flow velocities. On this foundation, suggestions are made for choosing the best flow channel for different circumstances. © 2023, The Authors. All rights reserved.

关键词： 逆变器   IGBT功率模块   运行环境   硬件故障   软件故障  

摘要： 绝缘栅双极型晶体管(IGBT)功率模块作为逆变器的核心元件,其可靠性直接关系到光伏电站的安全运行。通过IGBT功率模块频繁损坏的原因分析,从运行环境、硬件、软件以及板件自身等方面提出相应的改进措施并取得一定的成效,相关经验可供解决逆变器故障参考。