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关键词： 转底炉   主从控制   变频器   电气控制   上位机通讯  

摘要： 介绍了转底炉的电气设备选型、电气控制及功能实现,重点介绍转底炉四台驱动轴驱动控制主从控制逻辑及功能实现。建立基于西门子S120变频器的电气控制系统,实现上位机与变频设备通讯,实际应用证明,系统符合现场工艺要求,满足用户安全稳定生产的要求。

关键词： IGBT驱动   数据采集   FPGA   数字驱动   智能驱动  

摘要： 文章介绍了一种新型IGBT驱动器,该驱动器除具有传统的驱动与短路保护功能外,还具有运行状态数据采集功能。采集IGBT运行状态数据及其故障时刻数据,有助于理解IGBT工作环境,分析IGBT失效原理,为电力电子装置改进和正向设计提供理论依据。该驱动器以可编程逻辑器件FPGA为核心,集脉冲控制、驱动与保护、信号采集、串行通信功能于一体。文章详述了驱动器主要功能模块,运用数学建模、仿真和试验测试等方法验证了其功能与可靠性,为驱动技术数字化、智能化发展提供了技术储备,为IGBT模块失效分析与健康管理研究提供数据支撑。

关键词： 桅杆式起重机   PLC   变频器   电气系统  

摘要： 桅杆式架梁起重机结构简单、起重量大,操作方便,广泛应用于各类桥梁建设项目中的桥梁杆件吊装。目前,桅杆式架梁起重机传统电控系统中的继电器控制模式和串电阻调速模式已不能满足要求。随着PLC技术和变频器驱动技术的发展,“PLC+变频器”新型控制模式已经出现。将这种新型控制模式引入桅杆式架梁起重机的电气系统设计中,可以简化设计难度、加快设计速度、方便后期安装调试,提高起重机控制性能。以70 t桅杆式起重机为例,从电气系统控制方案和拖动方案设计出发,介绍桅杆式架梁起重机的结构形式,采用全变频及PLC控制模式设计了“PLC+变频器”控制模式的电控系统,并给出了详细的设计思路和设计结果,所提设计具有一定的实用性和借鉴意义。

关键词： 变流技术   空间利用率   操作效率   变频器   进线电抗器   西门子   工程设计   滤波器  

摘要： 2023年汉诺威工业博览会前夕,西门子发布了Sinamics系列新品--Sinamics G220高性能变频器。这款创新的变频器产品采用清洁变流技术,无需进线滤波器或者进线电抗器便可最高减少97%的谐波。Sinamics G220变频器的空间利用率和操作效率均有明显提升,使得工程设计更加简便。同时,Sinamics G220全面集成TIA博途,能够通过Startdrive创建数字挛生。

关键词： 变频传动   总过流   功率单元  

摘要： 西门子S120变频器因具有稳定的性能、迅速的动态响应和高精度的控制要求,使其在变频器市场中具有一定的地位,在轧钢领域也非常受欢迎。本文结合S120在飞剪传动系统中出现的总过流故障导致的长停机进行分析,为今后出现类似故障提供思路。

关键词： Multichip Insulated Gate Bipolar Transistor   Temperature distribution   Collector current sharing  

摘要： Multichip Insulated Gate Bipolar Transistor (IGBT) power modules are widely used in high power applications. However, the parallel connection of IGBT chips results in an inhomogeneous temperature/current distribution. In this paper, a thermographic camera is used to capture the temperature distribution of an opened Infineon IGBT module FF600R17ME4 where each IGBT switch has three IGBT chips. The influence of temperature distribution on collector current sharing is then examined in both healthy conditions and bond wire lift-off scenarios. In this research, the critical temperature distribution is demonstrated experimentally at both chip and switch levels. The experimental results reveal that there are, depending on the collector current, 8 degrees C to 60 degrees C temperature dif-ference at the chip level and 2 degrees C to 10 degrees C maximum temperature variation at the switch level. The severe temperature distribution impacts the collector current sharing less than 1 % variation under healthy conditions and 0.507 % at IC = 240 A upon the first bond wire lift-off. Other findings are that during homogeneous tem-perature distribution current densities are nearly similar per chip and less dependent on chip temperatures. Findings of this research have the potential to influence multichip Insulated Gate Bipolar Transistor (mIGBT) layout design. For example, having investigated the current density distribution at different operating points, it is recommended to increase the number of bond wires by 11 % for the chip placed in the middle for this particular module in order to increase reliability. Potential future research areas have also been identified.

关键词： Double-sided heat dissipation   junction temperature test   press-pack insulated gate bipolar transis-tor (PP IGBT)   thermal resistance test  

摘要： Precise measurements of the double-sided thermal resistance of press-pack insulated gate bipolar transistors (PP IGBTs) are challenging because of their special packaging and operating conditions. This article presents a method for calculating the double-sided heat dissipation ratio of PP IGBT modules. An indirect measurement technique for the power consumption on both sides of the module is also proposed, in which the water temperature is measured at the inlet and outlet of the water-cooled radiators corresponding to the collector and the emitter in the working state of the module. A PP IGBT device test fixture is constructed that can apply a measurable and adjustable pressure to the device and provide electrical connections. According to the proposed test theory, a matching double-sided thermal resistance test platform is developed to test a PP IGBT module made by the State Grid Smart Grid Research Institute. The influence of pressure on the thermal conduction characteristics of the PP IGBT module is then analyzed.

关键词： Insulated gate bipolar transistors   Temperature measurement   Logic gates   Junctions   Wires   Crosstalk   Monitoring   Crosstalk effect   insulated gate bipolar transistor (IGBT)   junction temperature monitoring   temperature-sensitive electrical parameter (TSPE)  

摘要： Despite that many temperature-sensitive electrical parameters (TSEPs) have been discovered for the online estimation of the junction temperature of IGBT devices, their wide adoption in the field is yet to come. This is because they are most susceptible to both the aging status and operating points of IGBTs, which can result in inaccurate results if not attended. In this study, a novel dynamic TSEP, the gate voltage undershoot V-GE(np) of the complementary IGBT switch, is proposed. It is based on the crosstalk effect and measured during the turn-off switching transition of the controlled IGBT switch for its temperature estimation. Its monotonic temperature dependence has been identified with implications for the changing load current and bus voltage, which are experimentally verified using a 1200 V/450 A IGBT module. The theoretical analysis and experimental results also show that V-GE(np) is independent of bond wire failures while providing comparatively high relative sensitivity. The MMC power equivalent experimental results are given to verify the feasibility of the proposed method in commercial engineering applications. Finally, the multivariate linear regression method is used to improve the ability to estimate the IGBT's temperature by accounting for the operating point.

关键词： 电机   自动控制系统   研究   指南  

ISBN: (纸本)9787030751768

摘要： 本书着眼于实践入门，通过遍历项目开发从0到1的过程，带领读者快速理解、快速实现无感FOC（feldorientedcontrol，磁场定向控制），以较短的时间、较低的代价初步掌握无感FOC的基本原理和运行特性、最终实现10000rmin以上的高速驱动。全书共5章，主要内容包括无感FOC概述、开发环境准备、无感FOC算法原理和编程实践等。行文尽可能秉持工程师口吻，少堆砌复杂的数学公式，多举例子、摆事实，以降低初学者入门难度。本书可作为工科院校自动控制、电子工程、机电一体化相关专业的教材，也可作为工程技术人员的参考书。

关键词： inverter   powertrain   efficiency   energy consumption   EV (electric vehicle)  

摘要： The cumulative inverter losses and power consumption of a silicon insulated gate bipolar transistor (Si IGBT) and three types of silicon carbide metal-oxide-semiconductor field-effect transistors (SiC MOSFETs) were evaluated on an electric motor test bench under a worldwide harmonized light vehicles test cycle (WLTC). SiC MOSFETs showed higher performance than Si IGBT regardless of the motor type and test vehicles. In the case of driving an interior permanent magnet synchronous motor (IPMSM), the latest 4th generation SiC MOSFET (SiC-4G) in ROHM has the lowest inverter loss and energy consumption compared with the other generations. In the case of driving an induction motor (IM), on the other hand, the 2nd generation SiC MOSFET (SiC-2G) in ROHM has the best energy consumption despite the fact that the inverter losses of SiC-2G are slightly larger than the loss of SiC-4G. The latest or later generation power device does not necessarily contribute to better performance in a total system by simply replacing early power devices.