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关键词： 功率半导体器件   汽车行业   电力传输   IGBT   智能化技术   电动汽车   供应商   微电子  

摘要： 6月5日消息,近年来,随着电动汽车市场的快速发展和智能化技术的进步,汽车行业对于高效能、可靠性强的电力传输和控制技术的需求越来越高。在这一背景下,IGBT(绝缘栅双极型晶体管)技术作为一种关键的功率半导体器件,引起了广泛关注。而在众多的IGBT供应商中,华润微电子(以下简称华润微)以其优秀的产品性能和可靠性,逐渐成为汽车行业的新宠。

关键词： 重心插值配点格式   对流扩散方程   最优控制问题   误差分析   Lagrange乘子法  

摘要： 为了讨论对流扩散方程最优控制问题的重心插值配点格式,首先,借助Lagrange乘子法,推导出由状态方程、伴随方程、最优性方程构成的最优性条件.其次,在空间x,y方向均运用重心插值配点格式离散方程组,并给出该配点格式的相容性分析.最后,数值实验验证格式的有效性,与经典有限差分格式比较,重心插值配点格式用较少的节点数就能具有很高的精度.

关键词： Insulated gate bipolar transistor (IGBT)   junction temperature   solder fatigue   thermal model  

摘要： The junction temperature (T-j) estimation of IGBTs is critical for improving their reliability. To obtain T-j, the existing reference point temperature (RPT) measurement-based methods require the power loss information, which is difficult to obtain accurately in the real-time applications. Also, these methods utilize the thermal model of IGBT, which changes with aging, resulting in an error in T-j estimation. In this article, a T-j estimation technique is proposed, which utilizes the temperature of multiple leads/terminals of an IGBT module. Unlike the existing methods, the proposed technique does not require the information of power losses in the power semiconductor chips (PSCs). Instead, the power losses in the PSCs are additional outcome of the proposed technique. Also, even for a degraded IGBT module, the proposed technique provides an accurate T-j estimation. The proposed technique also has the capability of estimating T-j of multiple PSCs in an IGBT module simultaneously. A mathematical analysis of leads selection for the proposed technique is presented in this article. Furthermore, a comparative analysis is presented between the proposed and the conventional method for a degraded IGBT module. The simulation studies of the proposed technique are carried out in ANSYS ICEPAK software. The proposed technique is also validated on an experimental setup developed in the laboratory.

关键词： Insulated gate bipolar transistors   Logic gates   Germanium   Voltage   Delays   Split gate flash memory cells   Capacitance   Dynamic avalanche   insulated-gate bipolar transistor (IGBT)   safe-operating area (SOA)   segmented gate (SG)   turn off  

摘要： In this article, the "segmented gate (SG)" concept is proposed and implemented in trench gate to realize both low loss and wide safe-operating area (SOA) for insulated-gate bipolar transistors (IGBTs). The poly gate of the proposed IGBT is split into segments along the trench and each segmented poly gate is surrounded by the poly emitter. This unique 3-D trench architecture is demonstrated under numerical studies to be highly effective in enhancing the short-circuit ruggedness, the turn-off capability, and the latch-up immunity. It enables a 37% reduction in saturation current and a 90% reduction in Miller capacitance. The proposed design also shows an improved trade-off relationship between ON-state voltage and turn-off loss. For the same turn-off loss, the ON-state voltage of the proposed IGBT is reduced by 0.25 V when compared with the conventional carrier-stored trench IGBT.

关键词： IGBT   Ohmic heating   bipolar current source   eddy current   null point  

摘要： Here, a versatile power supply system, consisting of two current sources, insulated-gate bipolar transistor stacks, and a capacitor bank, is proposed for application in various operations of the QUEST spherical tokamak. The central solenoid coil in this system can carrying a maximum current and voltage of +/- 8 kA and +/- 375 V, respectively. In plasma start-up experiments based on ohmic heating through double flux swing, a plasma current of over 100 kA is stably obtained. Moreover, the feedback control of the thyristor power supply is utilized to control the plasma current, plasma shape, and position. The oscillating central-solenoid current applies a bipolar loop voltage at constant time intervals, and the capacitor bank discharge facilitates a co-axial helicity injection as well as amplifies the toroidal current.

关键词： Discrete insulated gate bipolar transistor (IGBT)   failure modes   power electronic interrupter (PEI)   surge current interruption capability (SCC)   tail current   voltage clamping circuit (VCC)  

摘要： The power electronic interrupter (PEI) determines the current interruption rating of the dc hybrid circuit breaker (HCB). This article deals with discrete insulated gate bipolar transistor (IGBT)-based PEI modules. The influence of the voltage clamping circuit (VCC) on the surge current interruption capability (SCC) of the discrete IGBT is unveiled for the first time. Two commonly used VCC configurations are considered: a purely MOV-based voltage clamp and a MOV-resistor-capacitor(RC) combination clamp designated as types I and II PEI modules, respectively. Comprehensive measurements are used to analyze the device turnoff behavior under each PEI module type to determine their limitations, as well as their failure modes. The type I PEI is limited by the turnoff thermal stresses arising from the hard switching dynamics. The type II PEI, on the contrary, has the potential to achieve lower turnoff energy, among other benefits, but exhibits a unique failure mode during the tail current stage. Therefore, static and mixed-mode technology computer-aided design (TCAD) device simulations are introduced to provide further insights into the internal processes that alter the type II turnoff, and in turn, explain the failure mechanism. Finally, the influence of the various circuit parameters on the turnoff process is evaluated, and methods to enhance the SCC of the IGBT-based PEI are presented.

关键词： Energy management strategy (EMS)   game theory (GT)   insulated-gate bipolar transistor (IGBT) temperature   model predictive control (MPC)   plug-in hybrid electric vehicle (PHEV)  

摘要： Energy management strategy (EMS) of plug-in hybrid electric vehicle (PHEV) can coordinate the efficient coupling operation between multiple power sources, which is of great significance to the improvement of fuel economy and transmission efficiency. During the actual operation, EMS needs the electric drive system to operate frequently to achieve excellent vehicle performance. In this case, the temperature of insulated-gate bipolar transistor (IGBT) module inevitably increases and the thermal-mechanical stress caused by temperature fluctuation will lead to failure. To solve the above problems, a model predictive control (MPC)-based EMS considering IGBT temperature is proposed. First, Markov chain-based driver model is built for the prediction of future vehicle speed. Second, according to the thermoelectric coupling model description of the IGBT module, a predictive energy management framework is constructed with fuel economy and IGBT temperature indexes as objective functions. Then, under the MPC framework, a noncooperative game model with engine and IGBT as participants is established, and Nash equilibrium is taken as the solution. Finally, the simulation results indicate that the proposed strategy not only improves the fuel economy by 13.88% and 13.48% compared with the rule-based (RB) strategy under two driving conditions but also effectively reduces the temperature of IGBT.

关键词： Large scale   level-based learning swarm optimization sequential quadratic programming (LLSO-SQP)   multichips insulated-gate bipolar transistor (IGBT) module   state-space equation   thermal network model  

摘要： This article proposes a large-scale optimization approach for identifying thermal parameters of multichips insulated-gate bipolar transistor (IGBT) modules. State-space equation, in which the coefficient matrix comprises the thermal resistance and capacitance, is provided to represent the compact 3-D thermal network model. Then, the level-based learning swarm optimization (LLSO) algorithm is first utilized to identify large-scale thermal parameters. Additionally, to solve the inefficient convergence problem, the optimization results obtained from the LLSO are provided as the initial value of the sequential quadratic programming (SQP) algorithm to find the global optimal solution. Hence, the proposed LLSO-SQP algorithm can identify the large-scale thermal parameters efficiently and accurately. The training dataset for the algorithm is derived from the transient temperature response of a finite element model (FEM) of the IGBT module under power step excitation. Since only one-time simulation is in-demand, this approach needs less computational effort than others. The identified thermal network model is utilized to estimate junction temperature profiles taking a two-level inverter as a case study. In comparison to that of the experiment and FEM, the results validate the feasibility and accuracy of the junction temperature estimation method based on the compact 3-D thermal network model.

关键词： Lifetime prediction   FEM modeling   Fretting wear failure   Fault tree method   Press -Pack IGBT  

摘要： The reliability of the Press-Pack Insulated Gate Bipolar Transistor (PP-IGBT) device is important to guarantee the safety of modular multilevel converter (MMC). The fretting wear failure is the typical failure mode of long-time operation in the PP-IGBT device. However, the traditional fretting wear lifetime model of the PP-IGBT device only considers the fretting wear failure of the IGBT chip, which is difficult to accurately predict the reliability of the PP-IGBT device. The influence of fretting wear failure of all layers on the device's lifetime is ignored. This paper proposes a lifetime model of the PP-IGBT device by considering the fretting wear failure of all layers using the fault tree method. First, a finite element (FE) model of the PP-IGBT device is established by considering the multi-physics coupling, and the contact surface roughness change of each layer is obtained by power cycling simulation. Then, based on fretting wear failure and Basquin law, the lifetime of each layer is obtained, and a fault tree method is established to build the fretting wear lifetime model of the PP-IGBT device by considering the fretting wear failure of all layers. Finally, the power cycling experiment of the PP-IGBT device is established, and the experiment results are used to verify the effectiveness of the proposed lifetime model. The results show that the relative error between the proposed lifetime model and the experimental results is nearly 5 %.

关键词： ~Collector-emitter voltage rising slope   field-stop insulated gate bipolar transistor (FS IGBT)   IGBT modeling turn-off transient  

摘要： In this article, an analytical model is proposed to model collector-emitter voltage rising slope (dVCE/dt) of field-stop insulated gate bipolar transistor (FS IGBT) during the turn-off transient. Thanks to TCAD simulation, the internal physics of the FS IGBT during V-CE rise transient is investigated. Based on the improved understanding of the VCE rise transient, an analytical solution of the excess carrier distribution in the N-base region and field-stop (FS) layer is derived. An analytical model for dV(CE)/ dt of FS IGBT is also proposed. The temperature dependency of various silicon material and device parameters is included in the model. In the end, the double-pulse tests are performed on 650-V/40-A and 1200-V/40-A FS IGBTs. The test results are compared with the analytical predictions and good agreement is obtained.