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关键词： Generator side converter   IGBT module   electric frequency   failure sites   lifetime evaluation  

摘要： Affected by the randomness of the wind speed, the output electric frequency (0 similar to 20Hz) of the rotor-side converter does not match the thermal time constant (about 100ms) of IGBT modules, which causes the different junction temperature stress. It leads that it is difficult for the traditional lifetime model to reflect the influence of multi-time constant thermal load and result in inaccurate reliability evaluation. Aiming at the characteristics of wind turbine-side converters bearing thermal loads with multiple time constants, this paper studies the influence mechanism of electric frequency on the reliability of IGBT modules through a multi-physics simulation model and power cycling tests, and an improved lifetime model considering the influence of frequency parameters is proposed. Finally, an example analysis of the reliability evaluation of the DFIG rotor side converter is carried out. This paper is intended for the health management of converter systems and is supposed to be in service reliably.

关键词： capacitance   condition monitoring   insulated gate bipolar transistors  

摘要： Capacitance and Insulated gate bipolar transistor (IGBT) junction temperature are two critical healthy parameters for modular multilevel converters (MMC) sub-modules (SMs) condition monitoring. This paper proposes an integrated monitoring method for capacitance degradation and IGBT junction temperature variation. By measuring multiple characteristics of the same port voltage, the capacitance and the junction temperature can be obtained simultaneously, which greatly simplifies the measurement unit required for condition evaluation and realizes the submodule-level condition monitoring at a lower cost. The capacitance is characterized by voltage changes during capacitor discharging and the junction temperature is monitored by capacitor voltage overshoot (peak value) during IGBT turn-off. Theoretical analysis and experimental results verify the effectiveness of the proposed method and articulated the influence of load current, SM capacitor pre-discharge voltage, and junction temperature. Moreover, an online data-acquisition circuit for time-specific capacitor voltage characterization is devised.

关键词： Photovoltaic power generation system   Capacity ratio   Power limit   IGBT lifetime   Differential evolution algorithm  

摘要： In order to maximize the power generation of the photovoltaic power generation system under the premise of ensuring the reliable operation of the system, a method for setting the capacity ratio and power limit of the photovoltaic power generation system is proposed. Firstly, the influence of capacity ratio and variable power limit on the lifetime of the IGBT and the power generation of the system is analyzed. Then the optimal setting model of capacity ratio and power limit parameters of photovoltaic power generation system considering the lifetime of power devices is established, and the optimal capacity ratio and power limit are obtained by using the differential evolution algorithm to solve the model. Finally, the analysis results of examples in different latitudes verify the effectiveness of the proposed method.

关键词： Radiation damage to electronic components   Models and simulations   Radiation damage evaluation methods  

摘要： The insulated gate bipolar transistor (IGBT) has emerged as a prominent high-power semiconductor device due to its excellent overall performance. It is widely utilized in various fields, including aerospace. Due to prolonged operation in complex irradiation environments, the performance of IGBTs is susceptible to degradation and damage. Therefore, conducting research on the variation of IGBT characteristics under irradiation environments is crucial to ensuring their long-term functionality in extended space missions. To evaluate and analyze the total ionizing dose (TID) effect of IGBTs during operation, this study adopts a trench IGBT as the device model. Utilizing the finite element method, technology computer-aided design (TCAD) is employed to simulate and analyze the electrical characteristic changes of IGBTs under different total radiation doses. The simulation results are subsequently validated through theoretical analysis. The simulation results indicate that gamma radiation significantly affects the overall electrical characteristics of IGBTs.

关键词： Insulated gate bipolar transistors   Aging state of IGBT   Adaptive VMD decomposition   Improved sparrow search algorithm   Gated recurrent unit  

摘要： The insulated gate bipolar transistor (IGBT) is widely used in the power electronic system, but its aging state is difficult to predict in advance due to the complicated failure mechanism, which will affect the performance of the equipment, and even cause serious disaster. Therefore, we propose a combined prediction model based on adaptive VMD decomposition (AVMD) and attention-based gated recurrent unit (GRU-AT) to achieve accurate prediction of the aging state of IGBT. For the nonlinear characteristics of the IGBT failure characteristic parameters, AVMD with the key parameters optimized by improved sparrow search algorithm (ISSA) was used to disaggregate the character sequence to a series of finite wide subcomponents, which overcome the interference of the irregularity of aging time sequence data to the prediction accuracy. Secondly, the attention mechanism is introduced to capture the temporal feature relationship between the current moment output and the historical degraded data, further improving the generalization ability of the model. Finally, the GRU-AT network is used to model each wide modal sub-component independently, and final prediction results of IGBT aging parameters are obtained by superimposing the prediction results of each mode. The experimental results indicate that the AVMD-GRU-AT model designed in this article has superior prediction performance in both over-the-top single-step prediction and multi-step prediction of aging state of IGBT.

关键词： Insulated gate bipolar transistor   Fast neutron irradiation   Total ionizing dose effect   Displacement damage effect  

摘要： We studied the irradiation effects of fast neutron generated by a 30 MeV cyclotron on the electrical and switching characteristics of NPT-IGBT devices. Fast neutron fluence ranges from 2.7 x 109 to 1.82 x 1013 n/cm2. Electrical characteristics of the IGBT device such as I-V, forward voltage drop and additionally switching characteristics of turn-on and -off were measured. As the neutron fluence increased, the device's threshold voltage decreased, the forward voltage drop increased significantly, and the turn-on and turn-off time became faster. In particular, the delay time of turn-on switching was improved by about 35% to a maximum of about 39.68 ns, and that of turn-off switching was also reduced by about 40% -84.89 ns, showing a faster switching. & COPY;2023 Korean Nuclear Society, Published by Elsevier Korea LLC. This is an open access article under the CC BY-NC-ND license (http://***/licenses/by-nc-nd/4.0/).

关键词： Logic gates   Degradation   Insulated gate bipolar transistors   Tunneling   Threshold voltage   Condition monitoring   Stress   Condition monitoring (CM)   gate oxide degradation   insulated gate bipolar transistor (IGBT)   reliability  

摘要： The reliability of power converters is one of the important issues due to the widespread applications of power electronics in many industrial fields. Accordingly, condition monitoring (CM) methods for the assessment of the health of the converter components are considered a practical topic for researchers and experts in the field. This article aims to propose a CM method for insulated gate bipolar transistor (IGBT) gate oxide degradation. The proposed CM is based on the gate-emitter current during the turning-on process. It is shown that in the degradation process, the gate current peak value majorly increases. The proposed CM method captures this peak value and uses it as a degradation indicator. The proposed method is simple and analogous and can be used easily for online health assessment of the IGBTs under operation. It can be integrated into the driver module to assess the gate oxide degradation of the device. The functionality of the proposed method is evaluated using experimental prototyping. The target devices are a 1200-V, 40-A trench-gate field-stop IGBT and a 600-V and 60-A planner gate punch-through discrete IGBT. The achieved results show the validity and acceptable performance of the proposed CM for detecting the gate oxide degradation of the device.

关键词： DC and switching tests   IGBT power modules   lifetime   power cycling tests (PCTs)   thermal stresses  

摘要： The purpose of this article is to show and highlight the observed differences in power cycling test results between dc and switching modes. The focus is done in the generated thermal stresses in IGBT power modules where degradations concern the bond-wire contacts and interconnections. It has been found that for the same ?T-J test conditions, the necessarily higher load current in dc mode leads to a higher thermal stress in the bond wires than in switching mode. Consequently, the bond-wire contacts experience locally a slightly higher ?T than compared to the switching mode and to a slightly lower lifetime. The results of the experimental tests were corroborated by electrothermomechanical simulations with which the difference in lifetime between the two modes was evaluated.

关键词： Aging failure   condition monitoring   insulated gate bipolar transistor (IGBT) drive circuit   short-circuit  

摘要： The electrical parameters of the insulated gate bipolar transistor (IGBT) module change over the service life. By detecting the values of these parameters, the aging state of the IGBT module can be identified. Bond wire damage is the main characteristic of IGBT module degradation, and the impedance change of bond wire can directly affect the IGBT short-circuit current. In this article, an IGBT condition monitoring drive circuit based on a self-excited short-circuit current is designed. The drive circuit is directly connected to the IGBT module, which can obtain IGBT data from the lowest level and determine the aging state of IGBT most quickly. First, the relationship between IGBT short-circuit current and aging state is analyzed. Through the model establishment and mathematical calculation, it is concluded that the short-circuit current decreases after bond wire damage. Second, the self-excited short-circuit condition is introduced. By setting the gate voltage and collector-emitter voltage, IGBT condition monitoring can be realized with a small short-circuit current. Considering the influence of junction temperature on short-circuit current, a junction temperature monitoring circuit is designed to ensure that the temperature is basically consistent during condition monitoring. Finally, the IGBT bond wire damage experiment is carried out by using the IGBT condition monitoring drive circuit, which verifies the feasibility of the proposed method.

关键词： Artificial neural networks (ANNs)   Hefner model   insulated gate bipolar transistor (IGBT)   output characteristics   technology computer-aided design  

摘要： The output characteristics of the insulated gate bipolar transistor (IGBT) are the critical metric for the measurement of power control and conversion of power electronic systems. Existing methods are characterized by potential issues, such as high cost and extremely low simulation efficiency. In this article, by combining compact models and artificial neural networks (ANNs), we propose a novel technique for predicting the static output characteristics of IGBTs. The proposed method can rapidly predict the Hefner static model parameters including performance parameters. By introducing the model parameters into the electronic design automation (EDA) circuit simulator, output characteristics can be obtained. In addition, a phased prediction (PP) scheme is proposed to further reduce the prediction error of the model parameters. The effectiveness of the method is verified by comparing the results of the proposed method with those in the technical computer-aided design (TCAD) simulation and datasheet. Meanwhile, the method significantly improves the speed compared with TCAD simulation, which can improve the efficiency of obtaining electrical characteristics and reduce the design cost.