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关键词： Insulated gate bipolar transistor (IGBT) reliabi- lity   intermittent fault   multiobjective predictor   multiobjective predictor   multiobjective predictor  

摘要： The reliability studies of insulated gate bipolar transistor (IGBT) are significant in guaranteeing the stability of system operation. This article concentrates on the abnormality between the IGBT module and the controller, investigating the diagnosis method for its trigger pulse intermittent fault (IF). The proposed method focuses on the single-phase pulse rectifier, constructing a data-driven multiobjective predictor to simultaneously monitor four-way IGBT pulses. The nonlinear autoregressive with adaptive exogenous inputs model establishes the time-varying architecture for the IGBT pulse signal, while the random vector functional link determines its input-output mapping relationship. Additionally, periodic fault assessment criteria were developed to provide a clear demonstration of pulse randomness fault severity. Through experimental and robustness tests, the method is evidenced to be effective in detecting the occurrence of IF and achieving the security maintenance of the system for early faults.

关键词： Diagnostic strategy   hybrid modular multilevel converters   open-circuit fault   switching loss   switching method   Diagnostic strategy   hybrid modular multilevel converters   open-circuit fault   switching loss   switching method  

摘要： The hybrid modular multilevel converter (HMMC) has attracted extensive attention due to its dc fault ride-through capability. However, the research on its insulated gate bipolar transistor (IGBT) open-circuit fault (OCF) diagnosis is still barely seen, which becomes a research gap that may jeopardize the reliability of the HMMC system. To address this issue, this article first proposes an improved switching method, which can ensure all six types of IGBT OCFs unveil their fault characteristics thoroughly by using an extra bypassed switching sequence. Furthermore, the improved switching method remains the same switching loss as the existing switching method. Afterward, a diagnostic method is brought forward to identify the faulty SM by its fixed specific sequence in a period of time while the switching sequences of other SMs with the same type are dynamic. On this basis, an improved switching method-based diagnostic strategy that consists of various types of diagnostic methods is proposed, which can diagnose all six types of IGBT OCFs in the HMMC within 20 ms and have immunity to dc faults and load change. Experimental results in a hardware-in-the-loop platform verify the effectiveness of the proposed switching method and diagnostic strategy.

关键词： automotive motor controller   loss model   SVPWM   thermal simulation   IGBT  

摘要： This paper presents the establishment of an accurate loss model for high-power-density IGBT modules used in electric vehicles, leveraging the thermal simulation capabilities of the power electronics simulation software PLECS 4.1. The study aims to address the significant influence of IGBT losses on the energy efficiency and reliability of electric vehicles. A simulation model was built using the SVPWM modulation strategy to drive a three-phase inverter, and the average loss method was employed to determine both conduction and switching losses. The simulation results were compared with calculations based on the datasheet, showing a deviation of less than 4%. For instance, the actual conduction loss was found to be 7.988 W, compared to the theoretical calculation of 8.16 W, with a deviation of 2.15%. Similarly, the switching loss was 22.069 W, compared to the theoretical value of 22.447 W, with a deviation of 1.71%. These results confirm that the proposed model accurately predicts losses under specified conditions. Compared with traditional methods, the model presented in this paper offers higher precision and improved simulation speed, thus proving effective for accurate loss analysis of IGBT modules and supporting further energy efficiency improvement and system optimization in electric vehicles.

摘要： With the rapid advancement of social productivity and technological innovation, the insulated gate bipolar transistor (IGBT) has emerged as a cornerstone in modern power electronic devices [...].

关键词： IGBT   Finite element analysis (FEA)   Thermal-electrical simulation   ANOVA   Design of experience  

摘要： Power semiconductor devices, especially insulated gate bipolar transistors (IGBTs), play a vital role in high-power applications, including electric vehicles and renewable energy systems. In this study, we developed a benchmarking model based on finite element analysis (FEA) for eight different IGBT devices, utilizing experimental data to enhance our understanding of their performance. We measured electrical characteristics and temperature distributions under two current conditions (1A and 3A) and calibrated these measurements with our FEA model. Using the established benchmarking model, we explored the thermal and electrical characteristics of the devices, paying particular attention to how factors such as wire diameter and die tilt affect their performance and temperature distribution. Through the application of design of experiments, we investigated the relationships between these parameters and the performance metrics of the IGBT devices. Our findings highlight significant correlations, providing valuable insights for improving the reliability of IGBTs. The FEA-based benchmarking model and the analytical approach we present can serve as effective tools for optimizing design and enhancing device reliability, ultimately helping to reduce both development time and costs.

关键词： Vibrations   Wire   Insulated gate bipolar transistors   Logic gates   Fatigue   Stress   Resistors   Bond wires   gate loop   vibration fatigue   viscoelastic effect   von Mises stress  

摘要： Understanding the thermal effect on the vibration fatigue of bond wires within insulated-gate bipolar transistor (IGBT) modules is of utmost importance. This article addresses this concern by developing a vibration-temperature test bench specifically designed for IGBT modules. Through a preliminary test, it was discovered that the bond wires in gate loops are particularly sensitive components in the used IGBT modules. As a result, a high-frequency impedance measurement between the gate- and Kelvin-emitter terminals is proposed as an in situ counting indicator during vibration tests. The impedance, reflected by the peak voltage of a sampling resistor, exhibits noticeable variation before the complete disconnection of the bond wire. Subsequently, the study investigates the number of cycles to failure (NCF) at various temperatures, revealing a decreasing trend with rising temperatures. In addition, a mechanical stress and strain simulation model is developed, accounting for the viscoelastic effect of silicone gel. The damping effect of silicone gel is found to be dominant in the vibration process and this effect is temperature dependent. Based on measurement results of the storage and loss modulus, the increment in von Mises stress and strain on the root of the bond wire over temperature is derived, which theoretically explains the decreasing trend in NCF.

关键词： Hybrid switch   insulated-gate bipolar transistor (IGBT)   integrated gate-commutated thyristor (IGCT)   quasi-zero voltage   turn-OFF ability  

摘要： Integrated gate-commutated thyristor (IGCT) is a promising device in high-power applications thanks to its low on-state voltage, large surge capacity and considerably low cost ratio. However, IGCT's current-controlled nature restricts its turn-off capability, which in turn limits the fault current handling ability in high-voltage direct current power systems. It has been identified that IGCT has the potential of over-current interruption under ultralow turn-off voltage in the companion paper. Thereby, this article proposes to utilize the insulated-gate bipolar transistor (IGBT) in parallel to form an IGCT-IGBT hybrid switch, which facilitates the IGCT with quasi-zero voltage switching condition as well as current turn-off assistance. To testify the effectiveness, the prototype platform of the hybrid switch is developed with a 4-inch 4.5 kV/2.67 kA IGCT and the 4.5 kV/1.2 kA IGBT modules, and a series of current switching tests up to 20 kA are carried out, which reaches five times of IGCT's official turn-off capability. This article provides generalized insight and extensive experimental validation for the hybrid switch, highlighting its possibility for reliability and efficiency improvement in high power applications.

关键词： Wire   Stress   Insulated gate bipolar transistors   Vibrations   Resonant frequency   Resonance   Three-dimensional displays   Shape   Finite element analysis   Solid modeling   Expected life   insulated gate bipolar transistor (IGBT) module   reliability   vibration  

摘要： This article presents a case study on a gel-filled insulated gate bipolar transistor (IGBT) module under mechanical vibration, focusing on its failure mechanism and proposing a life model. First, we used finite element analysis (FEA) with ANSYS to predict the critical stress points, which turned out to be the bond wire feet. Second, we validated these findings to a high degree through experimental tests using a vibrating chamber. In both approaches, a strong correlation is found between the failure rate and the vibration profile, where wear rate increases as one approaches the bond wires' resonance frequency. In experimental tests, all samples happened to fail at the same location, i.e., the upper side foot of terminal bond wires. This result matches the simulation predictions, as these bond wires are the ones with the lowest resonance frequency, hence the closest to the real-world vibrations. A comparison between simulation and experimental results suggest that silicone gel adds to the system a beneficial low-pass behavior that is expected to extend bond wires lifespan.

关键词： Collector-emitter voltage drop   IGBT package degradation   motor drive   online condition monitoring   state-of-health (SoH) monitoring   Collector-emitter voltage drop   IGBT package degradation   motor drive   online condition monitoring   state-of-health (SoH) monitoring  

摘要： The on-state collector-emitter voltage drop (v(CE,on) ) of an IGBT as an indicator for package-related failures has been very well studied in literature. To obtain measurements at the same condition consistently remains a challenge as v(CE,on) varies with the junction temperature and current levels other than at inflection-point current level (I-inflection). The measurement of the v(CE,on) at the evaluated I-inflection is effectively decoupled from the effect of junction temperature such that the true state-of-the-health of the IGBTs can be assessed independent of temperature influence on v(CE,on). In this article, a new method has been proposed for in situ evaluation of I-inflection in two-level IGBT-based three-phase ( 3 Phi ) ac motor drive without expensive pre-characterization of IGBTs. The key advantage of the proposed method is the in situ evaluation of I-inflection with existing hardware without lowering the dc-link bus voltage and shorting the two IGBTs on the same phase leg. The method eliminates the need for calibration using a parametric semiconductor analyzer and thus, provides an inexpensive and faster estimation of I-inflection.

关键词： 随机最优控制   线性二次   Riccati方程   turnpike性质  

摘要： 本文综合了作者及其合作者们的最新相关工作,概述了随机线性二次最优控制问题的一些研究进展.文章主题由密切相关的三部分组成,分别是有限时区上的随机线性二次最优控制,无限时区上的随机线性二次最优控制,以及随机线性二次最优控制的turnpike性质.