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关键词： Domestic appliances  

摘要： Insulated gate bipolar transistors (IGBTs) are now widely used in a variety of products ranging from home appliances to power conversion equipment. This paper introduces multi-gate control techniques for IGBTs with the aim of further reducing their total power loss. Results of experiments using prototype devices confirmed that multi-gate control achieves reductions in turn-off loss (Eoff), turn-on loss (Eon) and reverse recovery loss (Err) by 27%, 50% and 32%, respectively, compared with the conventional single-gate controlled devices. © 2024 The Institute of Electrical Engineers of Japan.

关键词： bond wire   IGBT module   thermal management   reliability  

摘要： As a core component of power conversion systems, insulated gate bipolar transistor (IGBT) modules continually suffer from severe thermal damage caused by temperature swings and shear stress, resulting in fatigue failure. Bond wires falling off is one of the failure modes of IGBT modules. Given that the number of fallen-off bond wires is a significant parameter to evaluate the health status of the IGBT modules, this paper proposes an online identification model to recognize the number of fallen-off bond wires during normal operation. Firstly, a database containing datum Vce,on-Tj-IC (collector-emitter on-state voltage Vce,on, chip junction temperature Tj, collector current IC) planes with different fallen-off bond wires is built based on an offline aging test. Secondly, a Foster network model and a special circuit are designed to measure the junction temperature Tj and the collector-emitter on-state voltage Vce,on, respectively. Thirdly, the feature points of the IGBT module represented by Vce,on, Tj, and IC are given to the database to recognize the number of fallen-off bond wires according to the position of the feature points in the datum plane. The experimental results show that the proposed method can determine the fallen-off bond wires under the operation condition.

关键词： Buffer layers  

摘要： In this paper, a newly developed 3rd Gen. RC-IGBT is presented. To reduce the power loss and improve the heat dissipation of RC-IGBTs, we introduced four approaches, controlling Gate-capacitances, thin wafer technique, high-density diode arrangement, and low carrier injection anode and cathode. The superior performance of the 3rd Gen. RC-IGBT is very promising for the carbon neutral. © 2024 The Institute of Electrical Engineers of Japan.

关键词： Insulated gate bipolar transistors (IGBT)  

摘要： A concept on High-conductivity IGBT with Time And Space Control of stored carrier (TASC HiGT) for pursuit of low-loss is proposed. The function is divided into high-conductivity chip (Hc) and high-speed chip (Hs) controlled by Dual-gate so as to exhibit the optimum stored carrier density for conduction and switching operation. By obtaining controllability of the stored carrier density over the drift, a -47% trade-off improvement on 6.5 kV rated was demonstrated. The proposed concept can generate further -34% inverter loss effect keeping low-cost Si material merit. © 2024 The Institute of Electrical Engineers of Japan.

关键词： Current commutation   HVDC system   Hybrid circuit breaker   IGBT   Interruption capability  

摘要： Hybrid circuit breakers (HCBs) play a vital role in developing multi-terminal HVDC (MT-HVDC) systems, owing to their favorable features of fast fault current isolation and low on-state losses. In HCBs, the way of commutation of the fault current and the configuration of the main breaker branch have a significant impact on the performance of interruption. This paper proposes a new bidirectional HCB based on a coupled inductor that realizes robust interruption capability. In the proposed topology, a bridge-type breaker branch is utilized to realize the bidirectional breaking. By using insulated-gate bipolar transistor (IGBT) in combination with coupled-inductor-based circuit in the main breaker branch, the short-circuit fault is isolated. To validate the effectiveness of the proposed HVDC circuit breaker, simulations are performed using Matlab/Simulink.

关键词： Electric potential  

摘要： In this work, we report a newly developed analysis method to investigate the mechanism of turn-on voltage tail of IGBT, aiming at the reduction of turn-on loss (Eon). This analysis method visualizes how gate-collector capacitance (CGC) increases by monitoring the potential change at the interface of the gate oxide and silicon around the gate trench during the turn-on process. It was found that, in the turn-on transient, initially, the collector-emitter voltage (VCE) decrease, and CGC increase drastically when the potential around the gate trench falls below the gate-emitter voltage (VGE) and that the sudden increase of CGC causes the turn-on voltage tail. Detailed TCAD analysis reveals that the electric potential around the gate trench is lowered by the dummy trench and causes the sudden increase of CGC. To verify that the dummy trench is origin of the turn-on voltage tail, full gate trench IGBT with no dummy trench is studied. In the full gate trench IGBT, neither sudden increase of CGC nor turn-on voltage tail are observed. © 2024 The Institute of Electrical Engineers of Japan.

关键词： IGBT   turn-off switching   voltage surge  

摘要： Surge voltage at insulated gate bipolar transistor turn-off switching was analyzed with dependence on cell design parameters. Although drift layer thinning is effective in improving trade-off characteristics between turn-off loss Eoff and on-state voltage V-on, voltage surge is induced due to the quickly expanding depletion layer. Therefore, the surge voltage V-surge has also a trade-off relationship with Von at the same Eoff condition. The origin of the voltage surge was analyzed using TCAD simulation, and the total amount of remaining holes in the drift layer during turn-off switching is a key factor for the Vsurge. A narrow mesa structure and thick buffer layer are effective for the improvement of trade-off characteristics between Vsurge and Von. However, the optimum buffer layer thickness depends on the voltage-class due to the speed for punch through. (c) 2024 The Japan Society of Applied Physics

关键词： IGBT   scaling   TCAD simulation   RBSOA   reliability  

摘要： Robustness under high-temperature clamped inductive turn-off has been compared systematically among 3300 V scaled insulated gate bipolar transistors (IGBTs) with scaling factor k from 1 to 10 by technology computer-aided design simulations. Degradation of the reverse bias safe operating area (RBSOA) has been observed in proportionally scaled IGBTs, especially at a high turn-off current density. A non-proportional scaling method has been proven to be able to restore the robustness degradation with RBSOA close to the original k = 1 case. Moreover, the method for adjusting R pf (P-floating connecting resistor) adds more flexibility to device design and also improves the overall electrical performance of non-proportionally scaled IGBTs. The adjustment of R pf has been found to have a minimal effect on the RBSOA.

关键词： 电动助力转向系统   永磁同步电机   矢量控制   无位置传感器控制  

摘要： 电动助力转向系统(EPS:Electric Power Steering system)是汽车在行驶过程中稳定性和安全性的关键,而其性能取决于电机以及控制算法。早期,无刷直流电机被大量应用在EPS中,近年来,随着电力电子技术快速发展,永磁同步电机在解决了控制器成本问题后,逐步取代了无刷电机。永磁同步电机在矢量控制时,需要实时知道转子的位置,目前常用的是采用传统机械传感器获得位置信息,但助力转向电机长期工作在高温、多灰尘、潮湿的条件,这会使传感器失效,降低转向系统可靠性。本文以无位置传感器控制技术应用在EPS中展开研究,设计出助力转向电机的滑模观测器,并最终实现助力转向电机无位置传感器的控制。

关键词： IGBT   可靠性   寿命预测   模态分解   失效分布  

摘要： 为了防止绝缘栅双极型晶体管(IGBT)突发性失效而影响电力电子设备安全可靠运行,急需对 IGBT 剩余寿命做出精确预测,这对现有预测模型在高准确性和低不确定性方面提出了挑战.该文提出一种优化模型,该模型通过利用逐次变分模态分解(SVMD)技术来提取退化特征,并采用贝叶斯方法优化长短期记忆(LSTM)神经网络的超参数以提高预测性能.首先,该模型通过SVMD技术将退化特征数据分解为多个模态后将有用模态重构从而提取和增强退化特征;其次;利用贝叶斯优化方法通过高斯过程(GP)代理模型和期望改进(EI)采集函数对LSTM预测模型超参数实现全局寻优;最后,基于SVMD特征提取技术和贝叶斯优化LSTM网络的预测模型通过实际 IGBT 退化特征数据证明了模型的有效性和优越性.结果表明,所提模型与传统优化模型相比,提高了 13%的寿命预测准确性,并减少了 34%的预测不确定性.