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关键词： Insulated gate bipolar transistors (IGBT)  

摘要： Insulated gate bipolar transistor (IGBT) power module is a key component of actuator devices in many systems which include electric vehicles (EVs). However, as the deployment of IGBT modules penetrates several mission-critical systems operating in harsher ambient, process voids in the solder joints challenge their reliability and fatigue life. This investigation quantifies the impact of presence of 10% voids in critical solder joints on the integrity and fatigue-life of IGBT module for reliable field operation. Computational modelling utilising python programming algorithm deployed in Monte-Carlo technique is used to generate realist distributions of spatial random voids on three representative volume elements (RVEs) of critical solder joints in three IGBT modules. The three modules have elliptical voids, spherical voids and a combination of elliptical and spherical voids, respectively. A fourth control module has no void. Solder joints in the models comprises 96.5% tin, 3.0% silver, and 0.5% copper (SAC305). The IEC 60068-2-14 temperature load cycle and Anand's visco-plastic model are employed as the load and constitutive model, respectively. Other component materials are modelled with appropriate time and temperature dependent models and material properties. Combined elliptical and spherical voids induced the highest damage while elliptical voids induced the highest plastic strain of 0.045 µm/µm magnitude in the joints. Accumulated stress and strain energy have magnitudes of 74.05 MPa and 2.63 × 105 pJ, respectively. Ten percent elliptical voids in the joints reduced the fatigue life of the module by 59.5%. © 2025 The Author(s)

关键词： Insulated gate bipolar transistors   Wires   Numerical models   Numerical simulation   Bonding   Temperature measurement   Logic gates   Fatigue   Predictive models   Finite element analysis   Bonded interface   fatigue cohesive zone model (FCZM)   insulated gate bipolar transistor (IGBT)   machine learning (ML)  

摘要： Bonded interface cracking is the primary failure mode of insulated gate bipolar transistor (IGBT) modules during prolonged operation. A numerical simulation method that effectively characterizes fatigue crack propagation at the bonded interface of IGBT modules under power cycling conditions was developed in this study. First, power cycling tests (PCTs) were performed for different numbers of cycles, followed by pull tests on the Al bond wires, obtaining load-displacement (F- delta ) curves for the bonded interface after different power cycles. Then, a finite element-fatigue cohesive zone model (FE-FCZM) was established, considering the cumulative effects of interface damage during the power cycling. To determine the fatigue cohesive zone model (FCZM) parameters, the influence of these parameters on the F- delta curves was investigated using sensitivity analysis, and the F- delta curves for different degrees of damage at the bonded interface were calculated after various numbers of power cycles. A machine learning (ML) model was subsequently established utilizing the simulated F- delta curve as input and the FCZM parameters as outputs, effectively identifying the FCZM parameters. Finally, the F- delta curves obtained from numerical simulations and experiments, as well as the degree of damage at the bonded interface, were compared to verify the accuracy of the ML method and the numerical simulation method for bonded interface fatigue damage proposed in this study. In addition, the proposed method was used to predict the lifetime of IGBT modules and compared with several commonly used lifetime models. The results show that the proposed method has the smallest error among all the models that were compared. This article provides a numerical method for describing the damage failure of the bonded interface in IGBT modules, which are significant for lifetime prediction and reliability assessment.

关键词： Capacitance   Insulated gate bipolar transistors   Inductors   Impedance measurement   Resonant frequency   Junctions   Capacitance measurement   Impedance   Electromagnetic interference   Resonance   Electromagnetic interference (EMI)   insulated-gate bipolar transistor (IGBT) modules   parasitic parameters  

摘要： Half-bridge insulated-gate bipolar transistor (IGBT) modules are widely used in power electronic devices, and the high-speed switching of IGBTs in the modules can cause serious electromagnetic interference (EMI) through parasitic common mode (CM) capacitances in modules. Therefore, accurately extracting the parasitic CM capacitances of IGBT modules is significant for modeling and evaluating the EMI of power electronic equipment. Considering that the original extraction based on the resonance of the external inductor is affected by using asymmetric terminal measurements, this letter proposes an improved extraction method for parasitic CM capacitances of IGBT modules. The calculation method for parasitic CM capacitances of IGBT modules based on impedance measurement is presented. The impact of nonlinearity in junction capacitances during impedance measurements is greatly eliminated. The improved method is validated through measurements.

关键词： Insulated gate bipolar transistors   Temperature measurement   Heating systems   Sensors   Monitoring   Logic gates   Semiconductor device measurement   Optical fibers   Packaging   Junction temperature   maximum temperature   online monitoring   press-pack IGBT   temperature sensors   temperature sensors  

摘要： Press-pack insulated gate bipolar transistor (PP IGBT) junction temperature online monitoring is of vital importance for the health management of high-voltage power conversion systems. The tradition methods destroy the packaging component and are difficult to obtain the maximum temperature of PP IGBT. A temperature sensor integrated method for directly obtaining the maximum temperature of PP IGBT chip is proposed in this article. Due to the uneven temperature distribution on the surface of the chip, the maximum temperature measurement depends on the mounting positions of temperature sensors. Three mounting positions of temperature sensors including the gap between gate pad and emitter molybdenum (Mo), the emitter Mo, and the gate pogo pin are reasonably proposed by theory analysis. The finite element simulations and constant current source tests show that as the clamping force increases, the maximum temperature point drifts from the center of the emitter surface to the gap. The maximum temperature of PP IGBT chip is increased after the emitter Mo is grooved. The mounting position located at the head of gate pogo pin avoids the influence of stress on the temperature sensor. The feasibility of the proposed method is verified based on a half-bridge inverter.

关键词： Logic gates   Insulated gate bipolar transistors   Temperature sensors   Junctions   Monitoring   Current measurement   Capacitors   Voltage measurement   Temperature measurement   Temperature   Insulated gate bipolar transistors (IGBTs)   junction temperature monitoring   Miller plateau current   thermosensitive electrical parameter (TSEP)  

摘要： The insulated gate bipolar transistors (IGBTs) are most widely used in power electronics converters, and the junction temperature is a significant indicator for evaluating the IGBT reliability. In this article, in order to realize noninvasive monitoring of the main power circuit, the Miller plateau current is adopted as the thermosensitive electrical parameter (TSEP), and the proposed method can realize high accuracy for monitoring junction temperature of IGBTs. First, the Miller plateau current is adopted and studied as the gate-side TSEP. The turn-off process of IGBT and the character of Miller plateau current are studied. Subsequently, a sampling circuit and the parameters calculation method based on current transformer (CT) have been designed and analyzed. The uncertainty and integrability of sampling circuit have been discussed. Finally, the double-pulse test and inverter experimental platforms have been developed to validate the theoretical analysis. The experimental results have confirmed the accuracy of the theoretical analysis, the proposed method can achieve high accuracy and sensitivity for monitoring junction temperature of IGBTs from the gate-drive side. In addition, the sampling circuit is simple and easy to be integrated on the gate-drive circuit.

关键词： IGBT   IDBO-BP prediction model   AC power cycling tests with constant case temperature control   collector-emitter voltage   IGBT   IDBO-BP prediction model   AC power cycling tests with constant case temperature control   collector-emitter voltage  

摘要： The insulated gate bipolar transistor (IGBT) has widespread application in energy storage systems, motor drives, smart grids, household appliances and other various fields. These applications demand accurate evaluation of reliability through lifespan prediction to ensure optimal performance and longevity. This study proposes an innovative IGBT lifespan prediction model using an improved dung beetle optimized back propagation neural network (IDBO-BP). The model integrates chebyshev chaotic mapping and golden sine strategy to address critical limitations of existing methods, including low accuracy, poor computational efficiency and weak dynamic adaptability. Chaotic initialization is applied to enhance population diversity and adaptive golden ratio-modulated step sizes are utilized to refine local search precision. This innovative approach delivers breakthroughs in enhancing prediction accuracy and accelerating computation speed without compromising the system's global exploration capabilities. Besides, a constant case temperature-controlled AC power cycling test protocol was designed to verify the effectiveness of the improved algorithm. This test features suppression of thermal fluctuation interference and the consideration of both conduction losses and switching losses which better simulate real operating conditions. Experimental results demonstrate higher prediction accuracy of the IDBO-BP model compared to DBO-BP, PSO-BP, and GWO-BP. The R-2 values of IDBO-BP model surpass the other methods by an average of 4-27 percentage points respectively. Improved stability of IDBO-BP model is confirmed by lower RMSE values with average error reductions of 9.13-32.1 percentage points, which indicate enhanced robustness in handling nonlinear and fluctuating data for IGBT lifetime prediction.

关键词： Aging   Insulated gate bipolar transistors   Wire   Predictive models   Long short term memory   Junctions   Convolutional neural networks   Analytical models   Accuracy   Thermal stresses   IGBT   across working condition life prediction   saturated voltage drop   CNN-transformer model  

摘要： Insulated Gate Bipolar Transistors (IGBTs) are extensively utilized in a multitude of fields owing to their proficiency in power conversion and their dependable operation. Anticipating the service life of IGBTs to preemptively mitigate the repercussions of device failure, this research advances a novel lifespan forecasting methodology underpinned by a Convolutional Neural Network (CNN) and Transformer hybrid model. The methodology commences with accelerated aging power cycling tests within a range of temperature thresholds, utilizing the Siemens Power Tester to gather aging parameters at disparate junction temperatures. A pivotal observation is the alteration of the saturated voltage drop, VCE(ON), throughout the aging process, which is then harnessed as a critical aging indicator for model training. Following this, the accrued datasets from three distinct groups undergo a rigorous preprocessing phase. Subsequently, the proposed forecasting technique is deployed to predict lifespan across varying operating conditions. The empirical findings underscore that the model introduced in this paper, when predicated on the variations in saturated voltage drop, achieves markedly enhanced predictive fidelity in both single-step and multi-step forecasting scenarios, outperforming alternative comparative methodologies. Especially in single step prediction, the mean values of the coefficient of determination (R2), mean absolute error (MAE), and root mean square error (RMSE) are 0.996, 0.0016 and 0.0026, respectively.

关键词： direct current   hybrid DC circuit breaker   IGBT   recovery voltage   contactor   arc discharge  

摘要： DC power systems require reliable and cost-effective DC circuit breakers (DCCBs). In a previous study, we introduced a hybrid DCCB featuring a current-limiting fuse, insulated gate bipolar transistor (IGBT), and a varistor connected in parallel. However, this DCCB could not seamlessly mitigate IGBT voltage stress caused by factors such as the arc voltage induced by the fuse during current limitation, the transient recovery voltage during current interruption, and the source voltage. Traditionally, multiple IGBT connections in series have been utilized to address the risk of IGBT breakdown caused by overvoltage. However, this method may lead to voltage imbalances among the serially connected IGBTs, causing them to break. In this study, we present a novel commutation-path design for DCCBs that incorporates a vacuum contactor (VC) connected in series with the IGBT, alongside a capacitor connected in parallel with the IGBT path. The inclusion of the VC reduces the voltage across the IGBT;the inclusion of the parallel capacitor also reduces it at the moment of current interruption. This new commutation path design enables the voltage across the IGBT to be suppressed below original design requirements throughout the entire interruption process. (c) 2025 The Author(s). IEEJ Transactions on Electrical and Electronic Engineering published by Institute of Electrical Engineers of Japan and Wiley Periodicals LLC.

关键词： 信息扩散控制   最优控制   启发式控制   博弈论方法   社交网络  

摘要： 社交网络中信息扩散控制是当前信息传播领域的研究热点，本文系统梳理与综述了该领域的研究进展。首先，重点分析了谱优化控制、最优控制、启发式控制、博弈论方法等八类核心技术的基本原理。随后，从计算复杂度、适用网络规模、复杂网络适用性、动态网络适用性、适用场景、鲁棒性、优势与局限性等多个维度，对各类方法进行了深入评估与比较。此外，本文还探讨了前沿智能计算方法在社交网络信息扩散控制中的应用。最后，本文展望了社交网络信息扩散控制的未来研究方向。

关键词： Dual active bridge   Dynamic charge characteristic   Efficiency optimization   Insulated gate bipolar transistors   Modified current shape modulation  

摘要： Dual active bridge (DAB) converters play a crucial role in bidirectional DC-DC systems, making efficiency optimization strategies particularly important. In high-power applications, insulated gate bipolar transistors (IGBT) are commonly used as switching devices. The turn-off losses in IGBTs are primarily determined by the charge accumulation in the N-base region during switching. This paper analyzes the dynamic charge behavior within IGBTs and introduces a current correction modulation strategy (MCSM) based on triangular wave modulation, specifically designed for light load conditions. By reshaping the inductor current in the DAB converter, this method increases the time available for charge recombination within the IGBT, effectively reducing the turn off losses. The effectiveness of the proposed optimization modulation method is experimentally validated with a 4 kW DAB converter. Experimental results reveal that the converter achieves up to 90% efficiency at load power levels ranging from 5 to 42%. Compared to the zero current switching (ZCS), the zero voltage switching (ZVS) technique, and traditional single phase shift modulation, the proposed method improves efficiency by 8.42%, 11.67%, and 29.55%, respectively. Overall, this approach significantly reduces the turn off losses in the primary-side switches of the DAB converter.