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关键词： Coils   Legged locomotion   Switches   Inverters   Topology   Tokamak devices   Plasmas   Divertor tokamak test (DTT)   IGBT   interleaved strategy   non-axisymmetric coil power supply   single-phase inverter   unfolder switch  

摘要： This article deals with a single-phase inverter topology evaluation for a non-axisymmetric in-vessel coil system in a tokamak. An IGBT-based power converter topology is investigated to supply the magnetic system composed of several independent coils. The dc-ac converter topology used for a single coil consists of a single-phase inverter with an interleaved leg and unfolding switching strategy. The converter operation and control investigation are carried out with a Hardware-in-the-Loop (HIL) approach. In the paper, the main control design requests and the issues of this application are explored. Then, the effectiveness of the proposed approach is validated by the HIL. Furthermore, the selection criteria for the power switches are discussed.

关键词： A single insulated gate bipolar transistor (IGBT) open-circuit fault   fault location and tolerance   power electronic transformers (PET)  

摘要： Power electronic transformers (PETs) contains numerous power electronic modules and multiple power conversion stages, potentially leading to an increased failure rate. The complex impacts of insulated gate bipolar transistor (IGBT) faults and strong coupling between power conversion stages make it difficult to accurately locate faults using traditional methods designed for single stage converters. To address this challenge, a simple method to locate and tolerate a single IGBT open-circuit fault of PETs is proposed, by integrating and synthesizing the dynamic characteristics of measurement signals of PET and key node information of the controller loops. The proposed method is easy to implement without using additional sensors, and it can transfer between normal operation and fault tolerant operation without noticeable inrush current or voltage. Experimental tests validate the effectiveness of the proposed approach.

关键词： Cryogenics   Gate drivers   Integrated circuits   Power supplies   Capacitors   Voltage control   Superconducting magnets   Cryogenic electronics   gate driver   IGBT   MOSFET   propulsion  

摘要： Aiming to increase the power density of electrical systems and realize all-electric aircraft, research has been focused on immersing power electronics at cryogenic temperatures as they tend to have lower conduction and switching losses. To ensure proper switching of semiconductor devices at cryogenic temperature, their gate driver circuits should ideally be placed in close physical proximity and therefore in the same environment. Although some commercial off-the-shelf gate drivers have been tested at cryogenic temperatures, in this article we present a bespoke magnetically isolated gate driver for cryogenic temperatures. Experiments with the circuit immersed in liquid nitrogen verify the proposals of the article.

关键词： Recovery performance   Reverse-conducting insulated gate bipolar   transistor (RC IGBT)   Snapback-free   Turn-off loss  

摘要： A novel fast-switching P-poly trench collector reverse-conducting insulated gate bipolar transistor (RC-IGBT) with different N-buffer position (DBP) is proposed and investigated. Firstly, the N-buffer on P-poly TrenchCollector (TC) not on P+ and N+ collector will unaffected realize snapback-free with and without interface charge exist in the forward conduction. Secondly, N-buffer on TC can keep the fast extraction channel to the N+ collector open all the time, so that the ultralow turn-off loss (EOFF) can be achieved in IGBT mode, and the reverse recovery charge (Qrr) can be reduced in diode mode. Thirdly, N-buffer on TC makes the electric field distribution more uniform during forward blocking, thus further improving the breakdown voltage (BV). Fourth, N-buffer on TC can also provide more electrons to reduce forward peak recovery voltage (VFRM) during diode forward recovery mode. Compared with PNTC RC-IGBT, the proposed RC-IGBT enjoys lager breakdown voltage, and can reduce VFRM by 83%, Qrr by 27%, and the EOFF by 36%.

关键词： dI C /dt Controllability   Double gate PMOS (DGPMOS) insulated-gate   bipolar transistor (IGBT)   Electromagnetic interference noise   Forward bias safe operating area  

摘要： In this work, a 4H-SiC insulated-gate bipolar transistor (IGBT) with double gate PMOS (DGPMOS) is proposed. In the on-state, DGPMOS IGBT can form a hole barrier, thus reducing the on-state voltage (VON). During the turnon and turn-off transients, DGPMOS IGBT can form the extra hole extraction paths. This helps to reduce the turnoff loss (Eoff) and the gate displacement current (IG_dis). The simulation results show that compared with GS IGBT, the VON of DGPMOS IGBT is decreased by 58.04% under the same Eoff. Compared with PMOS IGBT, DGPMOS IGBT achieves better controllability in turn-on dIC/dt and peak turn-on current (Imax). At the same turn-on loss (Eon), the maximum reverse recovery dVKA/dt is lowered by 26.67%, and the electromagnetic interference (EMI) noise is suppressed. In addition, because DGPMOS IGBT has a small saturation current density (Jsat), its forward bias safe operating area (FBSOA) is greatly improved.

关键词： Superjunction (SJ)   Short-circuit withstand capability   Current filaments   Electrical destruction   IGBT  

摘要： This paper focuses on the short -circuit withstand capability of the superjunction (SJ) Field -Stop (FS) IGBTs, considering both electrical and energy destruction modes. The short -circuit withstand capability is measured through the short -circuit time ( T SC ). The electrical destruction, which is usually earlier than the energy destruction in conventional FS IGBTs, is studied by using parallel 32-cells, with the help of numerical electrothermal simulations. The results show that the current filaments, which cause electrical destruction in conventional FS IGBTs, are not observed in the SJ-FS IGBTs even when the collector current density reaches 5000 A/ cm 2 . The reason is that the SJ structure reduces the peak electric field and then suppresses impact ionization at the n-buffer region. As a result, the short -circuit withstand time of the SJ-FS IGBTs is larger than that of the conventional FS IGBTs. The maximum difference is up to 2.39 mu s.

关键词： 矿用交流电机传动   开绕组连接   变频器   共模电压抑制  

摘要： 针对传统中高压变频器输入端带有体积庞大且价格昂贵的工频移相变压器问题，提出一种用于开绕组电机的新型单向能流矿用变频器拓扑。整流级采用三个单相二极管整流器+Boost变换器电路结构，输入侧无需工频变压器进行隔离，具有高输入功率因数、低输入电流谐波及低开关管电压应力等特点，逆变级采用开绕组连接方式与交流电机相连实现了相间隔离。在该拓扑基础上，本文进一步研究了一种低共模电压的SVPWM调制策略，实现了系统单位功率运行、共模电压抑制及开绕组电机零序电压的消除。

关键词： IGBT并联均流   同步脉冲异步驱动   参数识别   误差分析  

摘要： IGBT模块特征参数差异是导致控制回路参数差异的重要因素，对IGBT并联应用动态均流特性影响至深。在无法更改器件参数的情况下，采用一些驱动补偿控制可以弥补器件差异对动态均流的影响，精确识别IGBT模块特征参数是此类方法的关键。本文主要研究采用同步脉冲异步驱动方案时，以门电阻为代表的参数识别精度差异对动态均流特性的影响。对IGBT器件本体特征参数的关联特性进行了研究，构建各参数与影响变量的特征模型。建立PSpice器件并联工作模型，结合器件手册数据比对与多工况测试参数校正，拟合出IGBT器件参数与影响因子变化曲线。通过两组模块1200V/200A 和1700V/300A IGBT并联开关特性实验，验证了关于IGBT特征参数差异对并联均流影响的判定。最后总结了特征参数识别精确性差异对动态均流特性的影响。

关键词： 多电平变换器   级联多电平变换器(CHB Converter)   故障容错  

摘要： 级联多电平变换器由众多单元模块组成，故障发生的概率相对较高，采取容错运行控制可以有效提高系统的可靠性和性能。通过注入零序电压来增强故障后的输出能力的容错控制方法具有不增加任何额外成本，实现简单的优势而被众人所关注，不同的实现方式所注入的零序电压值和基波分量值各不相同，过大的零序电压会在电机驱动中对电机轴承和绝缘产生较大的影响。论文针对该问题，探讨了一种包含三次谐波的零序电压注入方法，来减小所注入零序电压的基波分量，减小注入的零序电压对电机运行的影响。通过仿真和在10kW的七电平变换器实验样机上，验证了所提出的容错控制策略的有效性。

关键词： 新能源汽车   电机控制器   IGBT   温度均衡性   仿真分析  

摘要： 目的 电机控制器IGBT模块温度分布的均衡性对系统可靠性和稳定性有重要影响。但是，电机控制器结构紧凑，空间狭小，传统的温度均衡性控制方法和策略应用受到了极大的限制。因此，通过改变散热器的结构布局，探讨提高热源温度均衡性的控制方法。方法 利用数值仿真方法分别对散热系统的传统结构、Ⅰ型结构和Ⅱ型结构进行了热固耦合分析，对比分析了三种结构对IGBT热源最高温度、温度差及其温度分布均衡性的影响，并讨论了在冷却液不同流量条件下，三种结构中IGBT热源的温度分布特性。结果 研究表明冷却液的流量为2L/min时，相对于传统结构，Ⅰ型结构和Ⅱ型结构的最大温度差分别下降59.52%和64.29%，随着冷却液流量的增大，Ⅰ型结构和Ⅱ型结构对热源温差控制优势逐渐减弱，但仍优于传统结构。结论 通过对比分析，Ⅰ型结构中热源温度分布均衡性最好，传统结构中热源温度分布均衡性最差。冷却液流量的变化，对传统结构中温度分布均衡性的影响较大。随着冷却液流量的增加，传统结构热源平均温度最低，Ⅱ型结构的平均温度最高，同时三种结构热源的平均温度逐渐减低，而且不同结构之间的差值逐渐减小。