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关键词： 煤矿   胶带输送机   变频器   485通信   抗干扰措施  

摘要： 胶带输送机是矿井煤炭运输系统的主要载体,低故障率、高可靠性是胶带输送机选择的重要指标,直接决定着运输系统设备安全稳定、连续长周期运行水平的高低。胶带输送机采用变频器驱动方式有效保证运输系统安全可靠运行。通过对井下处理巷道胶带输送机变频器主从通信故障情况的分析,以提高变频器抗干扰性能为核心,提出了各种造成信号干扰的类型和方式以及现场的处理措施,重点结合现场处理措施进行了理论分析指导,以提高对变频器抗电磁干扰措施的认识和重视程度,对于胶带输送机变频器故障处理具有重要的指导意义。

关键词： Monitoring   Wires   Multichip modules   Logic gates   Temperature sensors   Insulated gate bipolar transistors   Delays   Auxiliary emitter voltage   bond wires lift-off   multichip IGBT modules   on-line monitoring   turn-on delay time  

摘要： Power semiconductor chips are used in parallel within the module to achieve a specific current capacity and power level. One of the most common failure modes of power modules is bond wire fatigue. Monitoring the health conditions of the chip is a cost-effective method to improve the reliability of the power module. This article uses auxiliary emitter voltage to monitor the chip open-circuit failure caused by all bond wires lift-off. The impact of chip failure on the switching process is analyzed, and four electrical parameters are extracted as health monitoring parameters (HMPs). The dependence of proposed HMPs on operating conditions such as gate resistance, bus voltage, load current, and junction temperature are investigated by experiments. The comparative analysis of the four HMPs shows that the turn-on delay time t(don) has high sensitivity and the strongest anti-interference ability. Finally, an on-line monitoring circuit for in situ detection of chip failures in multichip IGBT modules is designed. The circuit can be plug-and-play or integrated into the gate driver. The results show that a reduction of 276 ns in the measured t(don) for each IGBT chip failure.

关键词： Voltage   Insulated gate bipolar transistors   Doping   Silicon carbide   Logic gates   Silicon   High-voltage techniques   RC-IGBT   collector-side injection-enhanced   reverse conducting voltage   reverse recovery  

摘要： A novel structure of Collector-side Injection-Enhanced 4H-SiC Reverse-Conducting IGBT (CIE-RC-IGBT) is proposed by introducing a high-resistance P-bottom region on the collector side. The operation mechanism of collector-side injection enhancement and its simulation verification are presented. During the reverse conduction of CIE-RC-IGBT, the CIE effect increases the carrier concentration on the collector side, resulting in a much lower reverse conducting voltage (V-F) . Simulation results show that the VF of CIE-RC-IGBT is 4.04V, approximately 29.5% lower than the 5.73V of Con-RC-IGBT. The new CIE structure does not sacrifice other operation, such as forward conduction, turn off, and blocking characteristics, except for a slight increase in reverse recovery current.

关键词： IGBT drive circuit   gate voltage boosting technology   temperature rise   IGBT loss   traction converter  

摘要： Under certain circumstances, a high-speed railway may require constant acceleration or emergency braking, in which case the inverter may experience short-term overload conditions and the current passing through the IGBT will go beyond the rated design tolerance. Under overload conditions, the IGBT loss will increase instantly, raising the power semiconductor device's junction temperature in the process. This research examines the boosting-gate-voltage-driven IGBT control technology. It increases the gate drive voltage and the IGBT current capacity and decreases the conduction voltage drop of IGBT under short-term overload conditions, reducing the instantaneous loss and temperature rise undulation of IGBT. The working characteristics of IGBT devices are studied, and the influence of gate drive voltage on device loss and temperature rise fluctuations is analyzed. Based on the emergency acceleration and brake conditions of the actual train operation, the short-term overload characteristics of the inverter are analyzed. The optimization analysis of the boosting gate voltage under emergency conditions is carried out, and the IGBT drive circuit with gate voltage pumping function is designed. The effectiveness of the driving circuit is verified through PSpice simulation and actual switching characteristic test. According to the analysis of experimental data, it can be verified that increasing the gate voltage technology can reduce IGBT losses.

关键词： Insulated gate bipolar transistors   Impedance   Circuit faults   Reflection   Fault diagnosis   Time-domain analysis   Power cables   Characteristic impedance identification   fault diagnosis   IGBT   STDR/SSTDR   time-domain reflection signal  

摘要： The malfunction of an insulated gate bipolar transistor (IGBT) device can result in the failure and damage of both itself and the system in which it is installed, and various types of faults in the device typically lead to changes in its impedance characteristics. This article leverages the advantages of travelling wave reflectometry in the field of identifying characteristic impedance parameters of devices, and conducts device-level research on the transmission and reflection response characteristics of sequence/spread spectrum time domain reflectometry (STDR/SSTDR) signals for IGBT. On the one hand, based on a clear understanding of the aliasing patterns and their impacts on reflected signals, this article proposes a signal pre-processing algorithm using a time-domain signal transmission analytical model to reduce identification errors introduced by aliasing phenomena. On the other hand, based on establishing the mapping relationship between the characteristic parameters of various IGBTs and their different fault states, this article proposes an IGBT fault diagnosis method based on characteristic parameters identification of time-domain reflection signals. Compared to traditional methods, the proposed method can achieve nonintrusive fault detection for both IGBT and antiparallel diode simultaneously, and has the flexibility to adjust the testing conditions. Finally, relevant experiments were conducted to verify the proposed method, and the expected results were achieved.

关键词： Insulated Gate Bipolar Transistor (IGBT)   Semi-Insulating POly-crystalline Silicon (SIPOS)   Switching Loss  

摘要： A novel insulated gate bipolar transistor with Semi-Insulated POly Silicon (SIPOS) is presented in this paper and analyzed through TCAD simulation. In the off state, the SIPOS-IGBT can obtain a uniform electric field distribution, which enables a thinner drift region under the same breakdown voltage. In the on state, an electron accumulation layer is formed along the SIPOS, which can increase the injection level of the "PiN region" in the device, and the carrier concentration in the drift region is also increased due to the charge balance effect. Moreover, the SIPOS-IGBT can achieve a quick and thorough depletion in the drift region during the turn-off transient, which can greatly reduce the turn-off loss of the SIPOS-IGBT. These advantages improve the tradeoff between the conduction and switching losses. According to the simulation results, the SIPOS-IGBT obtained a 58% lower turn loss than that of a field-stop (FS) IGBT and 30% lower than an HK-IGBT with the same on-state voltage.

关键词： Logic gates   Insulated gate bipolar transistors   Gate drivers   Control systems   Switching circuits   Voltage control   Delays   Complex programmable logic device (CPLD)   field programmable gate array (FPGA)   insulated-gate bipolar transistor (IGBT)   intelligent gate driver   short-circuit (SC) protection  

摘要： In the realm of power electronics systems, gate drive and protection strategies are of paramount importance, bolstering reliability, efficiency, and safety. This article provides a comprehensive overview of existing methods for gate drive and short-circuit protection of insulated-gate bipolar transistor (IGBT), further elucidating the latest advancements with intelligent features. The structure of an intelligent driver with the trend of integrating more sophisticated features is presented first, followed by descriptions of its functions, such as overshoot optimization, electrical isolation, and sensor monitoring. The methods for gate drive are discussed and compared, particularly emphasizing the benefits of self-adaptive gate drive in reducing losses and overshoot. Subsequently, different strategies for short-circuit detection and shutdown protection are explored, complemented by discussions on recent short-circuit protection techniques. Finally, the promising approaches for future works are recommended. This review is intended to provide practical solutions for the design and development of IGBT operating circuits in the existing and emerging applications.

关键词： SiC IGBT   JFET width   Mechanism   Conduction characteristic  

摘要： In this article, the mechanism analysis of the impact of the LJFET on the conduction characteristic of SiC IGBT is verified through simulation results and actual tests. Planar p-channel SiC IGBTs with different LJFET including 3.2 mu m, 10 mu m, and 12 mu m are fabricated and tested for trend verification, and test results are fit with simulation. Under the same conditions, when the LJFET increases from 3 mu m to 10 mu m, the conduction characteristic is relatively improved. Moreover, the forward voltage drop degenerates when the LJFET increases from 10 mu m to 12 mu m. When the gate voltage is -20 V, the forward voltage drop of the p-channel SiC IGBT at the current density of 100 A/cm2 is -10.20 V. At the same time, the breakdown voltage reaches 10 kV.

关键词： Small Wind Turbines   Experimental platform   Permanent Magnet Synchronous Generator(PMSG)   Machine Characterization   IGBT Power Stack   DC-DC Boost Converter  

摘要： Wind energy technologies have emerged as the predominant renewable energy source within the framework of present-day electric power systems. Their design process, aligned with foundational theories, ought to be precision -engineered and systematized to fully maximize the potential of this energy source. This study presents a platform as solution designed and built to characterize and assess Small Wind Turbines (SWT), based on free software and open hardware. Additionally, the developed methodology step-by-step guide is disclosed. The characterization is based on the use of Permanent -Magnet Synchronous Generator (PMSG) as machine widely adopted in Wind Energy Conversion System (WECS) less than 100 kW. The core theoretical background is detailed to confirm the accuracy of the parameters procedures acquisitions. Poles number, machine design constant, armature reactance, synchronous reactance, and power -dynamic characteristic related to WECS are determined. This laboratory set-up is composed of variable industrial fan, rectifier, boost converter and a bidirectional Direct -Current (DC) source as a battery emulator. All components have been assembled within the laboratory environment using commercially available elements. Low implementation cost and versatile methods determine the real input in practice of this platform. To validate the effectiveness for any SWT, a real one is tested, and every parameter proposed is calculated.

关键词： Wires   Insulated gate bipolar transistors   Aging   Inductance   Monitoring   Junctions   Voltage measurement   Bond wire aging   frequency characteristics   IGBT module   online monitoring   ringing  

摘要： This paper introduces a novel online aging monitoring method for bond wires in IGBT modules based on voltage ringing frequency characteristics. The synchronous Buck converter was selected as the IGBT module test system. The influence of the aging degree of upper bridge arm IGBT module on the voltage ringing peak frequency characteristics of the lower bridge arm IGBT module is studied during the switching transient. Considering the influence of junction temperature, power loop wires inductance and driving resistance on the ringing frequency characteristics, this paper measured the standard ringing frequency under the coupling conditions of each factor. Then a standard database under different working conditions is constructed, and the database is used as a criterion to complete the monitoring task. Finally, the converter-level aging monitoring method of bond wires is realized which is non-invasive and real-time. The experimental results show that the proposed method does not need additional equipment, which reduces the complexity of monitoring circuit and has universal applicability.