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关键词： 循环水泵   冷端优化   变频器   智能控制   凝汽器   最佳真空  

摘要： 基于变频循环水泵的冷端优化智能控制系统,根据环境条件和机组参数,实时监测和分析冷端系统及各设备的性能状态变化,优化循环水泵运行方式并实时修正变频循环水泵运行频率,在机组保证安全稳定运行的前提下,使得发电机功率与循泵耗功之差在机组当前状态及条件下达到最大,尽可能地提升机组在部分负荷下的经济性。

关键词： 最优控制   模糊逻辑系统   强化学习   非严格反馈结构系统   actor-critic执行器   柔性关节机器人系统  

摘要： 针对非严格反馈结构下的柔性关节机器人系统,本文提出了一种基于强化学习的简化模糊优化跟踪控制算法,柔性关节机器人通过非严格反馈形式的四阶动态系统来描述,采用模糊逻辑系统逼近未知函数,并建立一个辅助自适应系统处理输入饱和问题.基于actor-critic的简化强化学习算法设计模糊最优跟踪控制器.此外,采用非负函数的负梯度下降法,而非贝尔曼(Bellman)残差误差平方法实现优化.通过Lyapunov稳定性分析,确保整个系统的半全局一致最终有界性.仿真算法说明了基于强化学习的模糊跟踪控制策略的有效性.

关键词： 三端口DC-DC变换器   LLC谐振腔   移相控制   解耦控制   多项式拟合  

摘要： 针对太阳能无人机高效发电系统的应用需求,提出集成光/储一体化设计的LLC谐振型三端口DC-DC变换器拓扑及其先进控制策略.采用时域分析的方法,对该三端口变换器在不同功率传输模式下谐振腔具有的多种工作模式进行分析,并采用移相控制实现对3个端口之间功率的灵活控制.为了得到准确的变换器增益特性的数学表达式,采用多项式近似的方法,拟合时域分析得到的增益曲面,并在此基础上提出解耦控制策略.解耦环路的设计能够有效降低三端口变换器多控制环路之间的功率耦合程度,优化动态性能.搭建500 W的试验样机,对该三端口电路拓扑的稳态运行特征、模式动态切换过程以及解耦环路的设计进行验证.实验结果表明,该时域分析方法能够准确描述电路特征,同时解耦环路能够有效降低控制环路之间的功率耦合程度,提升系统的动态响应性能.

关键词： 可编程逻辑控制器(PLC)   自动控制   变频器调速系统  

摘要： 设计和实施基于可编程逻辑控制器(Programmable Logic Controller,PLC)自动控制的变频器调速系统。详细阐述系统设计和实现的各个阶段,包括系统框架设计、硬件选择、控制策略设计、软件程序开发以及装配与调试优化,然后系统性地评估PLC技术在实际应用中的成效,以展示其在提高工业自动化水平和经济效益方面的潜力。

关键词： RC-IGBT芯片   高压系统   电力传动系统   英飞凌  

摘要： 随着纯电动汽车(BEV)和插电式混合动力电动汽车(PHEV)销量的快速增长,电动汽车市场的发展在不断加速。预计到2030年,电动汽车的生产比例将实现两位数增长,从2024年的20%增长至45%左右。为满足对高压汽车IGBT芯片日益增长的需求,全球功率系统和物联网领域的半导体领导者英飞凌科技股份公司推出新一代产品,包括为400V和800V系统设计的EDT3(第三代电力传动系统)芯片,以及为800V系统量身定制的RC-IGBT芯片。这些产品能够提高电力传动系统的性能,尤其适用于汽车应用。

关键词： 永磁同步电机   空间矢量脉宽调制   双闭环调速   MATLAB/Simulink仿真  

摘要： 分析永磁同步电机的数学模型和矢量控制系统组成,借助MATLAB/Simulink构建基于SVPWM技术的永磁同步电机矢量控制系统仿真模型,并通过设置合理的仿真参数,实现永磁同步电机空载和带载的仿真分析。仿真结果证明了该模型的有效性以及控制算法的正确性,为后续的现场教学和调试提供了理论基础和指导思路。

关键词： Electromagnetic interference   Noise   Switches   Oscillators   Aging   Insulated gate bipolar transistors   Power electronics   Wire   Inductance   Switching circuits   IGBT   electromagnetic interference   high-frequency oscillations   amplitude-frequency characteristics  

摘要： This paper investigates the impact of bond wire aging on differential mode (DM) electromagnetic interference (EMI) noise emissions in IGBTs under the influence of high-frequency ringing. Using a DC-DC buck converter composed of an IGBT half-bridge module as an example, the study analyzes the changes in the EMI spectrum caused by bond wire lift-off in both the time and frequency domains. The paper explains the generation mechanism of high-frequency oscillations induced by the interaction between the stray inductance of the DC link and the freewheeling diode. The study reveals that bond wire lift-off alters DM EMI noise emissions by affecting the switching characteristics of the IGBT. Additionally, an increase in the number of lift-off bond wires during ringing significantly enhances DM EMI noise emissions at and above the resonance frequency. The findings of this study provide a new perspective on the aging effects of power electronic devices and their impact on EMI.

关键词： Wire   Insulated gate bipolar transistors   Mathematical models   Monitoring   Stress   Strain   Force   Copper   Transient analysis   Power electronics   Bonding wire lift-off   condition monitoring   electromagnetic voiceprint (EMVP)   influencing factor mechanism model   insulated gate bipolar transistor (IGBT)   solder aging  

摘要： State monitoring technology is essential for the fault prognostics and health management of power electronic devices. Electromagnetic voiceprint (EMVP) signals, produced during the switching transients of these devices, carry substantial information about their health status. In recent years, EMVP signals have gained attention as a promising state monitoring indicator for power electronic devices. However, the mechanism by which the health status of a device affects its EMVP signals remains unclear, limiting their use in health monitoring. This article investigates the impact of insulated gate bipolar transistor (IGBT) health status on EMVP signals and develops a mechanistic model to illustrate the influence of bond wire lift-off and solder aging on EMVP signals. Simulation models were developed to analyze the impact of both scenarios on EMVP signals. Typical features are proposed to characterize the relationship between IGBT health status and EMVP signal. Experimental validation supports the theoretical framework and simulation results. The research provides a theoretical foundation for the development of reliability evaluation methods based on EMVP.

关键词： Insulated gate bipolar transistors   Analytical models   Switches   Capacitance   Voltage   Logic gates   Transient analysis   P-i-n diodes   Accuracy   Load modeling   Field-stop (FS) insulated gate bipolar transistor (IGBT)   IGBT analytical modeling   switching transient   temperature-dependent model  

摘要： The field-stop (FS) insulated gate bipolar transistors (IGBTs) (FS IGBTs) become a mainstay in the IGBT market for medium and high-power applications nowadays. The wide application of FS IGBTs led to a great desire for fast and accurate simulation of the device. In this article, an analytical transient model is proposed for FS IGBT. Based on the improved understanding of the switching behavior of FS IGBT, complete analytical expressions of V-ce and I-c at switching transient are derived. The pivotal device characteristics depending on the junction temperature T-j1 of low-side IGBT and T-j2 of high-side IGBT are identified and modeled. To extract model parameters, experimental and datasheet-driven parameter extraction methods are proposed. Double-pulse tests are performed on 600 V and 1200 V-rated FS IGBTs under various test conditions. The simulated and experimental results are compared and good agreement is obtained.

关键词： Switches   Sensorless control   Motor drives   Rotors   Motors   Observers   Analytical models   Voltage   Integrated circuit modeling   Vectors   Open-circuit fault   permanent magnet synchronous motor (PMSM)   position estimation  

摘要： Sensorless control under open-circuit faults is challenging for classic three-phase half-bridge motor drives. This article proposes a method that exploits the correlation between back-electromagnetic force (back EMF) and diode-through residual current in the insulate-gate bipolar transistor (IGBT) open-circuit phase. First, the residual current model is developed, followed by a sampling strategy that unifies the model under different speeds. Using this unified model, a phase back EMF observer is designed, enabling accurate postfault estimation of rotor speed and position. Experimental validation demonstrates the effectiveness of the proposed method, achieving an estimation error of 0.3 rad under steady-state conditions and 0.5 rad during acceleration and deceleration.