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关键词： 模流仿真   IGBT   外壳   嵌件注塑   端子偏移  

摘要： 随着科学技术的快速发展,计算机虚拟仿真技术在汽车、运动器材、建筑、电子产品等领域得到了广泛应用,不仅可以缩短的产品设计周期,也可以在中后期进行缺陷的优化。如IGBT的外壳此类产品,采用塑胶材料加金属端子做为嵌件进行注塑生产的方式,由于含嵌件的注塑其特殊性,在注塑过程中极易出现金属端子偏移的问题,而此问题在初期设计时没有考虑上,导致外壳成品发生不可接受的端子偏移量。利用模流仿真分析,针对IGBT的外壳端子偏移问题进行研究,给嵌件注塑外壳解决端子偏移问题提供支持。

关键词： 主动悬架   直线电机   结构优化   矢量控制   模糊比例-积分-微分(PID)  

摘要： 为了弥补汽车被动悬架没有主动控制力的缺陷,设计了一种基于传统被动悬架结构的直线电机式主动悬架。在被动悬架中加入直线电机,可以增加主动悬架的阻尼力,降低汽车的振动。首先,对直线电机的结构进行设计;其次,运用ANSYS/Maxwell磁场分析软件和控制变量法,优化直线电机各部分结构尺寸参数,结果表明,直线电机电磁推力的波动降低了83%,同时稳态推力提升了10%;最后,在MATLAB/Simulink软件中搭建直线电机式主动悬架的仿真模型,使用模糊比例-积分-微分(proportion integral differential,PID)对直线电机式主动悬架系统进行控制,分别在时域和频域进行分析,结果表明,相较于被动悬架,直线电机式主动悬架的车身加速度、悬架动挠度、轮胎动荷载都得到了有效抑制,车身加速度功率谱密度也有了大幅度的降低,有效地提高了车辆平顺性和操纵稳定性。

关键词： Baseplate distortion   residual stress   component thickness   reflow temperature curve setting   material varieties  

摘要： The welding of a direct-bonded copper (DBC) substrate to the baseplate in insulated-gate bipolar transistor (IGBT) modules often induces distortion and residual stress within the baseplate, consequently impacting the operational reliability of the IGBT module. Therefore, a comprehensive analysis of the factors influencing baseplate distortion and residual stress during the reflow soldering process is imperative. This study employs a finite element simulation model to investigate the effects of varying thicknesses of IGBT module components, reflow temperature curve settings, and types of material on baseplate distortion and residual stress. The simulation results highlight that the material of the IGBT module components exerts the most substantial influence on baseplate distortion and residual stress, followed by component thickness, whereas the impact of the reflow temperature curve setting is comparatively minor. The analysis of these influencing factors offers valuable insights for optimizing component thickness selection, material choices for IGBT modules, and reflow temperature curve settings. Moreover, it serves as a practical guide for enhancing production processes and minimizing associated costs. [GRAPHICS] .

关键词： Voltage   Time-frequency analysis   Insulation   Needles   Electrodes   Insulated gate bipolar transistors   Dielectrics and electrical insulation   Electrical tree   encapsulation   power electronic module   repetitive square voltage   silicone gel  

摘要： The insulating properties of silicone gel, which is widely used as the encapsulation of power electronic modules, directly determine their electrical insulation reliability, so the effects of applied voltage parameters in practical application scenarios should be investigated. In this article, the effects of the frequency, rise time, and duty cycle of the positive repetitive square voltage on the initiation and growth characteristics of electrical trees in silicone gel are investigated by means of a pin-plate electrode structure to simulate spike-like defects in power electronic modules. The frequency mainly affected the growth characteristics of electrical trees after the initiation of electrical trees. The rise time has an effect on the tree inception voltage (TIV) and the duty cycle not only affects the growth characteristics of electrical trees but also the TIV. The related mechanisms are discussed and explained in detail. The findings are expected to provide guidance for the design optimization and reliability improvement of the encapsulation in high-voltage power electronic modules.

关键词： Insulated gate bipolar transistors   Degradation   Thermal degradation   Temperature measurement   Temperature sensors   Thermal resistance   Monitoring   Case temperature matrix   condition monitoring   degradation type and level   insulated gate bipolar transistor (IGBT) module  

摘要： This article presents an intelligent approach for monitoring various thermal degradations in insulated gate bipolar transistor (IGBT) modules. Thermal degradation at the baseplate solder and thermal interface material (TIM) both induce changes in the case temperature distribution, offering insights into the corresponding degradation type and level. To capture this information, a strategically placed thermocouple array forms a temperature matrix on the case surface. The normalization of the case temperature matrix effectively mitigates the influence of working conditions, such as load current or heatsink temperature. Furthermore, a model augmented with a convolutional neural network is utilized to classify the degradation type and level based on temperature matrixes. To generate datasets under diverse operational conditions, a finite-element model of a conventional IGBT module is developed. The model includes various degradation locations (baseplate solder fatigue, TIM degradation, baseplate solder, and TIM degradation) and levels (health, early degradation, severe degradation, failure). Gaussian noise is introduced to the simulation data to enhance both training and prediction accuracy. Additionally, experimental data from a two-level inverter is incorporated into the training dataset to further refine accuracy. The results affirm that this approach excels in accurately distinguishing the degradation type and evaluating the degradation level.

关键词： Dynamic 2-D excess carrier distribution   dynamic control lumped-charge (DCLC)-based physical model   injection enhancement (IE) effect   insulated gate bipolar transistors (IGBTs)   micropattern trench (MPT)  

摘要： Due to the injection enhancement (IE) effect, the novel micropattern-trench (MPT) insulated gate bipolar transistor (IGBT) technique could accomplish a superior balance between the ON-state voltage drop and the switching loss. Nevertheless, modeling research regarding the MPT IGBT has yet been seldom conducted. When conventional models reliant on quasi-static assumptions are employed directly, the estimation of turn-off losses may be subject to substantial error. Thus, a novel physical paradigm for the MPT IGBT based on dynamic control lumped charge (DCLC) is introduced in this article. We newly propose a charge concentration expression for a MOS end region geometry-dependent charge concentration for an MPT structure that accounts for the dynamic 2-D excess carrier distribution. Meanwhile, a DCLC power diode model is established as a more accurate representation of the IGBT's turn-on characteristic. On the assumption that device parameters are known, the carrier turn-off dynamic of the proposed IGBT model is validated through comparison with TCAD simulation. The precision of the suggested model is additionally validated through experiments that encompass both static and transient attributes.

关键词： Temperature measurement   Temperature sensors   Junctions   Monitoring   Degradation   Logic gates   Threshold voltage   Condition monitoring   junction temperature   multichip IGBT power module   solder layer degradation  

摘要： Asymmetric chip placement and initial die-attach defects within a multichip IGBT power module (MIPM) can cause uneven junction temperature distribution and further accelerate the solder layer degradation. This is one of the main factors which affect the performance and reliability. This study uses the auxiliary emitter voltage v(eE) to indirectly measure the turn-on delay time and the maximum rate of change of the collector current. The physical significance of the virtual junction temperature extracted from the two measurands is clarified. The correspondence between the v(eE) and the degradation level of the solder layer is established using the difference between the two estimated temperatures. A novel condition monitoring method is then proposed in this article to identify the degradation level of individual solder layers using v(eE), which separates the effects of solder layer fatigue and bonding wires lift-off. The current dependence of the proposed method is negligible. Simulation and experimental results indicate that the proposed method can sensitively detect the highest degradation level of the chip in a MIPM in real-time.

关键词： Package   press-pack insulated gate bipolar transistor (PP-IGBT)   reliability   short-circuit withstand capability (SCWC)   targeted optimization   Package   press-pack insulated gate bipolar transistor (PP-IGBT)   reliability   short-circuit withstand capability (SCWC)   targeted optimization  

摘要： In this article, an electrical-thermal-mechanical (ETM) multiphysics transient finite-element (FE) model is proposed for the press-pack insulated gate bipolar transistor (PP-IGBT) module, and a targeted optimization package (TOP) is designed to enhance the short-circuit withstand capability (SCWC). First, an ETM transient FE model is proposed based on a 3.3-kV/ 50-A PP-IGBT and the coupling relation among electrical, thermal, and mechanical. The weak part of the SCWC is identified by combining the test with the simulation of the short-circuit transient process. Second, the pattern and dimension parameters of TOP are investigated to realize the best performance. Then, its SCWC improvement and reliability are verified through the SCWC, blocking voltage, and power cycling test. The SCWC of the TOP PP-IGBT has increased by over 100% compared to that of the conventional PP-IGBT.

关键词： Collector-emitter voltage rise slope (dV(CE)/dt)   dynamic conduction current (DCC)   near-zero current turn-off (near-ZCT)   space-charge region (SCR)   trench gate/field-stop insulated-gate bipolar transistor (Trench-FS IGBT)  

摘要： When high-power trench gate/field-stop insulated-gate bipolar transistor (Trench-FS IGBT) modules operate at near-zero current turn-off (near-ZCT), the conventional collector-emitter voltage rise slope (dV(CE)/dt) model does not consider the extension behavior of the space-charge region (SCR) into the FS layer. In addition, it does not account for the effect of dynamic conduction current (DCC), resulting in poor model generality. To address these issues, this article first derives an expression for the voltage at the turning point where V-CE exhibits a two-stage slope, occurring as the N-base region expands into the FS layer. Furthermore, the boundary conditions for V-CE exhibiting a two-stage slope are determined. Second, based on the proposed expression and boundary conditions, accounting for the effect of DCC on the excess carrier concentration in the N-base region, a segmented analytical model for dV(CE)/dt is proposed. Finally, IGBT modules with various technologies and voltage ratings were experimentally tested. The results from simulations and hardware experiments validate the effectiveness and accuracy of the proposed method.

关键词： Diamonds   Silicon   Insulated gate bipolar transistors   Liquids   Substrates   Surface treatment   Films   Diamond   hot-filament chemical vapor deposition (HFCVD)   insulated gate bipolar transistor (IGBT)   liquid metal   polycrystalline diamond (PCD)  

摘要： Diamond-on-Si insulated gate bipolar transistors (IGBTs) on a floating zone (FZ) silicon wafer is fabricated and investigated. The polycrystalline diamond (PCD) of the Diamond-on-Si IGBT is used for a heat spreader of high-power devices, which helps to raise the breakdown voltage and short time at the on-state so as to cool down temperature in the N-drift region in IGBT operating and reduce the turn-off power. Moreover, the Diamond-on-Si IGBT could improve more current extremely, and nano diamond particles (NDs) grain size near the interface Si/Diamond that led to a higher in-plane thermal dissipation compared with the conventional IGBT. By fine control of the seed size and areal density, thermal conductivity near multihole collector contacts region can therefore be improved. Measurement results of diamond of 140 mu m IGBT show that under turn-off loss (E-off ) of 1.24 mJ/cm(2 ), breakdown voltage (V-BR) of 1.32 kV and collector-emitter current (I-ce) is as high as 150 A/cm(2), which is superior to most of conventional IGBTs. In addition, the reasons for the Diamond-on-Si IGBTs results are also discussed in this article. Finally, the advantages of Diamond-on-Si IGBTs in terms of thermal performances are verified by measurement, and this article also provides a guideline for the process of Diamond IGBTs by the liquid Ga catalysis.