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关键词： Insulated gate bipolar transistors (IGBT)   Heavy copper wires   micro-alloyed   Chlorination   High-temperature oxidation   Power cycling  

摘要： In this study, we introduced trace amounts of silver and nickel into 500 mu m diameter copper wires to form micro-alloyed copper wires used in insulated gate bipolar transistors (IGBT). The addition of silver and nickel enhanced the mechanical properties of the conductors and suppressed the work hardening effect, significantly improving the power cyclic lifetime. Additionally, this study conducted chlorination and high-temperature oxidation test to compare the application characteristics of the heavy micro-alloyed copper wires with pure copper wires, through tensile and bending test, as well as electrical property comparisons. Finally, Cu50Ni (50 ppm Ni) wires were selected and nickel ceramic substrates for wire bonding to evaluate module electrical properties and bonding reliability. In the chloride test, there was no significant pitting corrosion observed in copper wire, and the micro-alloyed copper wire outperformed the pure copper wires in terms of bending lifetime and power cycling performance. In the high-temperature oxidation test, an oxide layer of cuprous oxide formed on the surface of all wires. The pure copper wire exhibited a significant increase in resistance. Notably, the micro-alloyed copper wires had better resistance to oxidation. Regarding wire bonding, the use of Cu50Ni wires and nickel ceramic substrates reduced the diffusion rate of nickel atoms from the substrate to the copper wire, forming a thinner alloy diffusion layer. This prevented electrical degradation and achieved high bonding reliability, especially under higher bonding forces. These findings confirm that micro-alloyed copper wires are suitable for high-power applications.

关键词： Insulated gate bipolar transistors   Market research   Uncertainty   Predictive models   Degradation   Prediction algorithms   Accuracy   High-speed train   model-based method   multialgorithm   multivariability   performance degradation parameter (PDP)   power insulated gate bipolar transistor (IGBT) module   remaining useful life (RUL) prediction  

摘要： Accurately predicting the remaining useful life (RUL) of power insulated gate bipolar transistor (IGBT) modules is crucial for high-speed trains. Challenges under actual train operations, including significant uncertainty, multivariability, and insufficient full-lifecycle datasets of performance degradation parameters (PDPs), hinder the accurate RUL prediction. Thus, a hybrid RUL prediction approach is proposed. To address the significant uncertainty in PDP, variational mode decomposition (VMD) is utilized to segregate low-frequency trend information from the high-frequency uncertainty information, enabling distinct prediction approaches for diverse data. Besides, kernel density estimation-bidirectional long short-term memory network (KDE-BiLSTM) is proposed to precisely quantify and forecast the significant uncertainty information. Moreover, to tackle the multivariability of PDP, a Wiener-based transferable trend information modeling technique is introduced. Furthermore, to predict PDP trends with insufficient datasets, a model-based method employing regularized particle filter-RIME-least squares support vector machine (RPF-RIME-LSSVM) is proposed for trend information prediction. RIME-LSSVM solves the missing observation problem in the RPF prediction phase. Ultimately, the integration of the trend and uncertainty information yields the final RUL prediction. The proposed method was validated utilizing Infineon 6500 V/750 A IGBT modules. The maximum RUL prediction error was 9000 cycles, validating the method's effectiveness. The prediction error of at least 7000 cycles below the baseline models demonstrated the method's superiority.

关键词： Heating systems   Junctions   High-voltage techniques   Leakage currents   Insulated gate bipolar transistors   Temperature measurement   Multichip modules   6.5 kV   high temperature reverse bias (HTRB)   high-voltage high-temperature high-humidity reverse bias (HV-H3TRB)   high-voltage power IGBT modules   railway   self-heating   thermal runaway  

摘要： In this article, a temperature stabilization method of high-temperature reverse bias (HTRB) and high-voltage high-temperature high-humidity reverse bias (HV-H3TRB) tests for 6.5 kV high-voltage power IGBT modules used in railway is proposed. The traditional climate chamber is not suitable for stabilizing the temperature of high-voltage IGBT modules, as there are multi-chips connected in parallel, which can create a high leakage current during the high-voltage blocking state at high junction temperature. The proposed junction temperature stabilization method can avoid thermal runaway caused by positive feedback between power loss and junction temperature in HTRB and HV-H3TRB tests, and the effectiveness is confirmed by experimental results. Furthermore, a precise junction temperature measurement method based on leakage current is proposed, which can be used to set initial junction temperature correctly for HTRB and HV-H3TRB tests.

关键词： DC power transmission   semiconductor devices  

摘要： The lack of an MMC reliability evaluation approach that incorporates data on essential components' health monitoring in the already related research prevents reliability from being further improved. Therefore, this article proposes a real-time reliability evaluation method of the multi-state IGBT module in MMC through iterative calculation of the Markov chain model. The degradation process of the IGBT module is divided into multiple states based on the monitored bond wire failure, and the failure rate of the IGBT module is updated in real time using the accumulated monitoring data of junction temperature. The proposed method can more accurately reflect the real state of MMC compared with the binary state evaluation method. Besides, a multi-channel high-speed data acquisition board is designed to measuring the gate voltage and collector voltage of the IGBT for the health evaluation of IGBT modules in MMC;the typically measured results validate the effectiveness of the data acquisition board.

关键词： Trench IGBT   Single-event burnout (SEB)   Technology computer-aided design (TCAD)   Heavy ion   Inherent parasitic transistor  

摘要： In this paper, based on TCAD simulation, a detailed investigation of the SEB failure mechanism of trench IGBTs featuring a deep trench with slanted side-walls structure is conducted for the first time by studying the temporal evolution of electrostatic potential, impact ionization, electric field, current density, and hole concentration distributions. The study reveals that heavy ion irradiation can induce the turning-on of inherent parasitic transistors, leading to the formation of latch-up and consequently SEB. Firstly, the peak electric field transfer leads to high-level impact ionization at the homojunction, injecting ionized electrons into the base-neutral region to turn on the parasitic PNP transistor. Secondly, ionized holes flow through the P-well towards the emitter, diminishing the potential barrier between the P-well and the N+ source region, thus activating the parasitic NPN transistor. Finally, with the parasitic NPN transistor remaining forward-biased, it continuously supplies electron current to the parasitic PNP transistor, thereby sustaining its operation. In summary, the conclusions obtained from the study can provide important references for a deeper understanding of the failure mechanisms of trench IGBT devices in harsh radiation environments.

关键词： Bond wire   Solder layer   Insulated gate bipolar transistor (IGBT)   Electrical-thermal-mechanical multi-physical   field coupling  

摘要： As the key package structure of insulated gate bipolar transistor (IGBT), the bond wire and solder layer are susceptible to failure due to alternating thermal stress, which can seriously change the operating characteristics of the package structure. In this paper, an electrical-thermal-mechanical multi-physical field coupling simulation model of IGBT including the fine bond wire and solder layer structure is constructed, whose equivalence and accuracy are verified by experiments and characteristic curves. Based on the constructed healthy model, the simulation results find that the fourth bond wire at the center location shows the highest temperature of 38.7 degrees C and the maximum mechanical stress of 55.5 MPa. Subsequently, the researches on single-structure failure and dual-structure simultaneous failure are carried out. The results show that bond wire failure only significantly affects its own operating characteristics, while solder layer failure affects itself and bond wire simultaneously. Moreover, the temperature rise due to the bond wire failure is more significant with an 86.8 % increase, while the mechanical stress change due to the solder layer failure is larger with a 178.2 % increase. The research in this paper can guide the reliability improvement of IGBT and the optimization of IGBT package structure.

关键词： IGBT module   Vibration   Multi-physics simulation   Solder layer fatigue  

摘要： Insulated-gate bipolar transistor (IGBT) modules are extensively utilized in high-speed trains, ships, and electric vehicles. Compared to those used in power systems, IGBT modules in these applications are more susceptible to vibration effects on their reliability. This paper proposes a multi-physics field simulation method and a lifetime model for IGBT modules to assess the impact of different vibration directions on solder layer fatigue. Initially, a multi-physics field model of the IGBT module is developed, incorporating electrical, thermal, mechanical, and vibration coupling. The effectiveness of this multi-physics simulation model is verified by an experimental platform. Subsequently, the influence of different vibration directions on solder layer fatigue in the IGBT module is analysed, and a life model of the IGBT is proposed through simulation. Finally, a power cycling with a vibration environment experimental platform is established to validate the effect of vibration on solder layer fatigue in the IGBT module. The simulation and experimental results indicate that vertical vibration accelerates the solder layer fatigue of IGBT modules, and the lifetime of an IGBT module operating under vertical vibration at 30 Hz is about 15 % shorter than that of an IGBT module operating under power cycling alone. The error between the calculated results of the solder layer failure and the experimental result is <5 %.

关键词： 永磁同步电机   自抗扰控制，超螺旋滑模控制   矢量控制  

摘要： 为了提高永磁同步电机矢量控制性能，解决传统比例积分（proportional integral，PI）控制超调，抗干扰能力不足的问题，提出了自抗扰速度控制器和改进超螺旋滑模电流控制器。在转速环中引入非线性误差控制率和扩张状态观测器，提升自抗扰响应速度和抗干扰能力；在电流环中引入改进的超螺旋滑模控制，提高了永磁同步电机响应的快速性和电流品质。搭建永磁同步电机自抗扰控制和超螺旋滑模控制相结合的仿真模型，在仿真结果中实现了快速跟踪阶跃信号，电流波动小，系统出现扰动时，电机的转速和转矩波动较小，迅速恢复稳定，提高了系统的鲁棒性和动态性能。

关键词： 故障诊断   IGBT   间歇开路故障   因果卷积   残差神经网络  

摘要： 针对地铁列车牵引逆变器中绝缘栅双极性晶体管（Insulated Gate Bipolar Transistor， IGBT）间歇开路故障的隐蔽性和传播性，提出一种内涵因果分析的Causal-Res故障诊断方法。首先深入挖掘逆变器输出三相电流信号之间的潜在因果关系，利用时间卷积网络（Temporal Convolutional Network， TCN）中的因果卷积机制，构造能够表征IGBT间歇开路故障特性的特征向量，然后结合残差神经网络（Residual Neural Network）特征学习能力对故障特征向量分类实现故障诊断。试验结果表明，提出的方法在IGBT低概率和高概率发生间歇开路故障的场景下，其定位故障IGBT的准确率分别为99.99%和99.95%，对比试验也说明了因果关系的引入能有效提高诊断方法的准确率和稳定性。

标准号: GB/T 44802-2024

摘要： 本文件规定了柔性直流输电用绝缘栅双极晶体管驱动器的术语和定义、使用条件、总体要求、主要参数选取、技术要求、试验以及包装、标志、运输和贮存。本文件适用于±800 kV及以下采用模块化多电平换流器技术的柔性直流输电用绝缘栅双极晶体管驱动器，基于其他换流器拓扑的电力电子设备用绝缘栅双极晶体管驱动器参照使用。