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关键词： ACS1000变频器   循环水冷却系统   故障分析  

摘要： 针对化工生产装置挤压机ACS1000变频器循环水冷却系统在运行过程中多次出现的故障,导致挤压系统非计划停车。通过对循环水冷却系统不断进行优化攻关,切实提高了变频器循环水冷却系统的运行稳定性,确保了化工生产装置挤压系统长周期运行。

关键词： 变流器   风力发电   功率循环  

摘要： 随着经济社会快速发展和能源需求持续攀升,风力发电作为一种清洁、可再生的能源,展现出巨大的发展潜力。风电变流器作为风力发电系统中的关键组件,其可靠性直接影响到整个系统稳定运行。IGBT作为风电变流器的核心部件,其性能对风电变流器的效率和可靠性至关重要。本文首先概述风电变流器与IGBT的基本概念及作用,然后详细分析热循环、电气应力和环境因素对IGBT可靠性的影响。为了提升IGBT在风电变流器中的可靠性,本文从改进散热系统、提升材料性能与工艺水平以及强化维护与管理三个方面提出了具体措施。通过优化散热设计、选用高品质IGBT器件和封装材料、加强设备的定期维修与管理,可以有效提高IGBT的可靠性和稳定性,进而确保风力发电系统长期稳定运行,推动新能源事业蓬勃发展。

关键词： 功率单元串联   节能调速   高压电机   电压等级   高压变频器   低压变频器   产品简介   功率范围  

摘要： 功率范围6kV 220-5000kW 10kV220-20000kW如有其他电压等级需求,我们将提供定制服务。产品简介蓝海华腾FV81-H系列高压变频器,凭借公司在低压变频器领域的深厚积累,采用成熟的功率单元串联技术,专为高压电机节能调速设计。该系列集成了先进的矢量控制算法,具有高可靠性、易操作、高性能的特点,广泛应用于风机、泵类、压缩机等设备的节能调速。

关键词： Cooling   Stress   Thermomechanical processes   Packaging   Multichip modules   Insulated gate bipolar transistors   Metals   Junctions   Thermal stresses   Substrates   AlSiC   double-sided cooling   interposer   power cycling test (PCT)   thermal resistance  

摘要： As the power density of electric vehicles continues to increase, double-sided cooling technology has emerged as a focal point of research. However, the complexity of double-sided cooling structures leads to significant thermal mismatch issues, potentially resulting in the failure of interconnect among components. The hotspot in interposers further exacerbates the risk of thermal failure in attach layers. This article proposes using AlSiC interposers to enhance the heat dissipation and power density handling capability of the module. In addition, we designed and manufactured a 750-V/300-A 1-in-1 flip chip double-sided cooling (FCDSC) insulated gate bipolar transistor (IGBT) power module with AlSiC interposers. Thermal and thermomechanical stress simulation results showed that, at a total power loss of 180 W, the maximum junction temperature of the module with AlSiC interposers is reduced by 4.4% compared to the conventional Mo interposer module, and the maximum thermal stress in the attach layers is slightly decreased. The thermal resistance of the module with AlSiC interposers is 12.8% lower than that of the module with Mo interposers. Furthermore, it was proved by the power cycling tests (PCTs) that the lifetime of the FCDSC power module using AlSiC interposers is 25% longer than that with Mo interposers and at least two times longer than that with Cu interposers under the same T-max and Delta T . Static electrical tests demonstrate that the power module with AlSiC interposers exhibits no degradation.

关键词： Insulated gate bipolar transistors   Pins   Mathematical models   Semiconductor device modeling   Integrated circuit modeling   Logic gates   Junctions   Insulated-gate bipolar transistors (IGBT)   negative carrier lifetime   SPICE model   two-dimensional (2-D) charge distribution  

摘要： This article presents an enhanced physical SPICE model for insulated gate bipolar transistor (IGBT) modules, grounded in a two-dimensional charge distribution. The model accurately delineates the lateral charge distribution under both static conduction and transient conditions, providing a precise representation of the PNP and PIN components of the IGBT. The improved model more effectively describes current distribution and clarifies parasitic effects, such as latch-up phenomenon. Furthermore, a negative carrier lifetime near the gate is introduced in accordance with the carrier movement direction, resulting in a catenary charge distribution in the PIN segment of the IGBT. This aligns closely with the technology computer-aided design (TCAD) results. Notably, the carrier concentration in the N(-)base region significantly escalates under high-level injection conditions. The model incorporates an N+N- junction and a P+N- junction within the channel to portray the carrier concentration variation during the transient state, also factoring in the effect of temperature on the IGBT characteristics. Implemented in PSPICE, the model's findings are compared with TCAD outcomes and experimental data. These comparisons illustrate that the proposed model precisely delivers the charge distribution, as well as dynamic/static characteristics and unbalanced current in parallel devices of the IGBT.

关键词： Junctions   Insulated gate bipolar transistors   Calibration   Estimation   Voltage measurement   Temperature measurement   Accuracy   Condition monitoring   insulated gate bipolar transistor (IGBT)   junction temperature   knee voltage   power converter  

摘要： on-state saturation voltage of insulated gate bipolar transistor (IGBT) devices at low current levels has been widely employed for offline junction temperature evaluation but rarely implemented online. This article investigates the IGBT on-state voltage at conduction currents ranging from tens to over one hundred milliamps, identified as knee voltage. A practical implementation for online junction temperature estimation using knee voltage in an operating power converter is presented, encompassing data acquisition and processing as well as a converter-level calibration scheme. The knee voltage is acquired from the zero-crossing transient of the converter current, and the relationship between junction temperature and knee voltage is calibrated with converter start-up events, which can be accomplished in a short term with an accuracy comparable to offline calibration. The uncertainty imposed by converter operating conditions on the estimation accuracy is comprehensively analyzed and corresponding solutions are given. The component-level characterization tests and converter-level proof-of-concept experiments validate the feasibility and effectiveness of the proposed method.

关键词： Insulated gate bipolar transistors   Estimation   Transient analysis   Integrated circuit modeling   Switches   Behavioral sciences   Employee welfare   Double pulse test (DPT)   feature fusion   graph convolutional network (GCN)   insulated-gate bipolar transistor (IGBT)  

摘要： The dynamic electrical characteristics of insulated-gate bipolar transistor (IGBT) are of great significance in practical high-power electrical applications and are usually evaluated through double pulse test (DPT). However, DPTs of IGBTs under various working conditions are time-consuming and laborious. Traditional estimation methods are based on detailed physical parameters and complex formula calculations, making deployment process challenging. This article proposes a novel DPT efficiency enhancement method based on graph convolution network (GCN) and feature fusion technology, which can estimate and supplement switching transient waveforms of all working conditions. Thereby, dynamic electrical characteristics of the IGBT are obtained by estimated waveforms of DPT. This method proposes a multimodal attention fusion network to capture and fuse the features of switching transient waveforms between different positions thereby improving the expressive power and performance of the model. Moreover, this method is novel in that it is the first to utilize GCN to embed DPT data under multiple working conditions into a graph structure, which can use the graph structure information to fuse the features of spatially correlated working conditions data to obtain reliable estimation results. The method has been verified to be effective and accurate on real dataset collected on two batches of IGBTs.

关键词： Logic gates   Buried n-layer   common-mode (CM) noise   dummy gate (DG)   electromagnetic interference (EMI) noise   gate-collector capacitance (C-GC)   ON-state voltage drop (V (CEON))   reverse recovery dV (AK)/dt   trench insulated-gate bipolar transistor (TIGBT)   turn-off loss (E-off)   turn-on loss (E-on)   trench insulated-gate bipolar transistor (TIGBT)  

摘要： A novel optimized trench insulated-gate bipolar transistor (TIGBT) with dummy gate and buried n-type carrier stored layer (DGBN-TIGBT) is proposed and investigated in this article. The heavily doped buried n-layer embedded in the p-body region of the proposed device not only enhances the conductivity modulation in the drift region without producing a negative impact on the breakdown voltage (BV) but also forms a self-adaptive hole path through the integrated pMOS with the dummy gate (DG). Moreover, the lower p-type region is connected to the emitter via the pMOS adaptively during the switching transient, which reduces the gate-collector capacitance (C-GC) and mitigates the accumulation of holes near the corner and bottom of the gate trench. This enables lower power loss and suppressed electromagnetic interference (EMI) noise. Simulation results show that compared with the conventional carrier stored trench bipolar transistor (CSTBT), the ON-state voltage drop (V (CEON)) at a current density of 200 A/cm(2) is reduced by 24.2% and C-GC at V (CE) of 25 V is reduced by 42.6%, respectively. The turn-off loss (E-off) is also reduced by 60.9% with the same V-CEON of 0.97 V Furthermore, the reverse recovery dV (AK)/dt of the freewheeling diode (FWD) is dropped by 23.6% with the same turn-on loss (E-on) of 14 mJ/cm(2). Therefore, the common-mode (CM) noise can be reduced up to 12.9 dB & sdot;mu V for the proposed device in the frequency range of 40-100 MHz.

关键词： silicon carbide (SiC)   silicon (Si)   Hybrid Power Switch   IGBT   MOSFET  

摘要： Hybrid Power Switches (HPS) combine the advantages of SiC unipolar and Si bipolar devices and therefore can bridge the gap between these technologies. In this paper, the performance of a hybrid power switch configuration based on the latest SiC MOSFET and Si IGBT technologies is presented. The device is evaluated through experimental measurements of its characteristics under various conditions. The results show the HPS can achieve switching losses as low as a SiC MOSFET while offering the high current capability of the IGBT without significant increase in costs.

关键词： Thin film deposition   Pulse-power   IGBT  

摘要： A modulated pulse-power magnetron sputtering system (MPPMS) was commissioned and used to deposit niobium on copper. MPPMS utilizes a modulated pulse train with high peak-to-average energy ratios, thereby increasing the energy density leading to the production of the energetic ions. The MPPMS modulator was designed and constructed based on large voltage/current IGBT modules, which can be externally modulated, produce bi-polar waveforms, and are readily available. A high voltage power supply provides moderate current to the IGBT module to create the precise pulse structure. The MPPMS system was used to deposit-1 mu m thick, niobium film on a copper substrate held at-77 K to minimize Nb atom surface diffusion and maximize intrinsic film energy. The Nb film had an average grain size of-8 nm.