关键词：
Large-area synthesis at low temperatures
Electronic and optoelectronic devices
Device-to-device variation
Scaled dimensions
Energy efficiency
Thin film transistors
Photodetector
摘要：
From their inception, two-dimensional (2D) van der Waals (vdW) layered materials, such as graphene, hexagonal boron nitride (h-BN), and semiconducting transition metal dichalcogenides (TMDCs), have been touted as an attractive material platform to realize post-Si electronics which can revolutionize the automotive and transport sectors, packaging industry, smart buildings, healthcare, display technologies, and many other applications. To this end, the past decade of continuous research has exploited the exquisite optical, mechanical, electrical, and physical properties of 2D materials for demonstrating impressive device performance. However, several fundamental and manufacturing challenges remain to be solved to enable the integration of 2D materials-based devices in commercial electronics. These challenges include: i) fabrication of top-gated field effect transistors (FETs) to allow electrostatic control of individual devices which is not possible using global back-gate geometry widely used in literature, ii) large-area synthesis of 2D materials at low temperatures (below 700 ºC) compatible with various commercial platforms such as transparent glass substrates, and iii) development of energy efficient electronic and optoelectronic devices on with low device-to-device variation and scaled device dimensions. This dissertation attempts to resolve these aforementioned challenges. In recent years, several strategies have been adopted for the gating of individual 2D field effect transistors (FETs), such as drop casting ionic liquids (ILs), deterministic transfer of insulating 2D h-BN, and atomic layer deposition (ALD) of high-k dielectrics. However, these techniques have their respective weaknesses which inhibit their large-scale implementation. This work demonstrates the integration of a transparent spin-on silicon-based dielectric, hydrogen silsesquioxane (HSQ), as the top-gate dielectric for 2D-FETs. The dielectric strength of HSQ was evaluated and its compatibility wi
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