关键词： Amorphous semiconductors   Elemental semiconductors   Germanium   Electrical properties   Sputter deposition  

摘要： Hydrogenated amorphous germanium‐nitrogen alloys (a‐GeN _x :H) were synthesized as a new group of amorphous semiconductors by rf(13.56 MHz) reactive sputtering of a Ge target in a gas mixture of Ar+N₂+H₂ under a variety of deposition conditions such as gas ratio, rf‐discharge power, and substrate temperature. Structural, optical, and electrical properties of those a‐GeN _x :H alloys were systematically measured and are discussed in relation to their preparation conditions. The optical band gapE _{0 4} of a‐GeN _x :H alloys could be continuously controlled in the range from 1.1 eV to 3.3 eV primarily depending on the atomic N/Ge ratio in the film. The role of hydrogen and nitrogen in the optical and electrical properties of the material is also crucially demonstrated.

关键词： Amorphous semiconductors   Transistors   Elemental semiconductors   Germanium   Hole mobility  

摘要： The first hydrogenated amorphousgermanium and hydrogenated amorphous silicon‐germanium alloy field‐effect transistors with appreciable field‐effect response in n‐ and p‐channel modes were developed by reducing the dihydride content in the films. Field‐effect mobilities were derived from transistor characteristics. Hole mobilities are superior to those in pure hydrogenated amorphous silicon which offers the opportunity for improved thin‐film devices.

标准号: NF P26-411/AM-1970